2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS) 2016
DOI: 10.1109/memsys.2016.7421589
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Nano-pyramid arrays for nano-particle trapping

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“…Assuming a 2 Hz bandwidth on a sample with height variations of 1 µm, with 50 nm asymmetry, the cross width has to remain above 500 nm. This is far away from the 26 nm that can be achieved by corner lithography (Sun et al, 2016). This implies that not only the photomask, but the entire lithography step has to be improved.…”
Section: Discussionmentioning
confidence: 90%
“…Assuming a 2 Hz bandwidth on a sample with height variations of 1 µm, with 50 nm asymmetry, the cross width has to remain above 500 nm. This is far away from the 26 nm that can be achieved by corner lithography (Sun et al, 2016). This implies that not only the photomask, but the entire lithography step has to be improved.…”
Section: Discussionmentioning
confidence: 90%