Nano-Scanning Calorimetry Applied to Phase Change Processes in GeTe Thin Films

Gao, Libin; Liu, Minghao; Qu, Sanyin; Liu, Jinxu; Fu, Shuaishuai; Ding, Yao; Chen, Hongwei; Zhang, Jihua

doi:10.1109/ted.2023.3283233

Cited by 2 publications

(1 citation statement)

References 29 publications

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“…[ 19 , 28 , 32 , 79 , 95 ]. and insulators often used are SiO 2 , SiN x , AlN [ 23 , 28 , 75 , 96 , 97 , 98 , 99 , 100 ]. AlN can also be a heat spreader to reduce the consumption of PCSs [ 101 ].…”

Section: Gete-based Phase-change Switches (Pcss) For Rf Applicationmentioning

confidence: 99%

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

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The global demand for radio frequency (RF) modules and components has grown exponentially in recent decades. RF switches are the essential unit in RF front-end and reconfigurable systems leading to the rapid development of novel and advanced switch technology. Germanium telluride (GeTe), as one of the Chalcogenide phase-change materials, has been applied as an RF switch due to its low insertion loss, high isolation, fast switching speed, and low power consumption in recent years. In this review, an in-depth exploration of GeTe film characterization is presented, followed by a comparison of the device structure of directly heated and indirectly heated RF phase-change switches (RFPCSs). Focusing on the prototypical structure of indirectly heated RFPCSs as the reference, the intrinsic properties of each material layer and the rationale behind the material selection is analyzed. Furthermore, the design size of each material layer of the device and its subsequent RF performance are summarized. Finally, we cast our gaze toward the promising future prospects of RFPCS technology.

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Section: Gete-based Phase-change Switches (Pcss) For Rf Applicationmentioning

confidence: 99%

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

Self Cite

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Effect of Deposition Pressure and Temperature on Tungsten Thin-Film Heater for Phase-Change Switch Applications

Qu,

Zhang,

Gao

et al. 2024

Micromachines

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Tungsten (W) film is increasingly utilized in various microheater applications due to its numerous advantages. These advantages include a high melting point, positive constant temperature coefficient of resistance (TCR), good mechanical stability, and compatibility with semiconductor processes. In this paper, deposition parameters for enhancing the properties of W film were investigated, and an optimized microheater was fabricated. It was found that the deposition temperature and pressure can modify the TCR to be negative or positive and the crystalline phase of W films to be alpha phases or mixed with beta phases. A W film deposited under 650 °C with a pressure of 1 pa has a positive TCR and pure alpha phase crystalline structure. We applied this optimized W film as a microheater in an RF phase-change switch (RFPCS), and the maximum voltage of the optimized W microheater increased by at least 48% in this work. By optimizing the microheater, the phase-change switch can be successfully actuated in both on and off states, demonstrated by the Raman results of the phase-change material. A voltage pulse of 20 V/200 ns was enough to turn the switch off with MΩ, and 11 V/3 μs could turn the switch on with 138 Ω. The optimized microheater and device can cycle 500 times without failure. The insertion loss and isolation of the device at 20 GHz was 1.0 dB and 22 dB.

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Nano-Scanning Calorimetry Applied to Phase Change Processes in GeTe Thin Films

Cited by 2 publications

References 29 publications

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Effect of Deposition Pressure and Temperature on Tungsten Thin-Film Heater for Phase-Change Switch Applications

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