Nano-star formation in Al-doped ZnO thin film deposited by dip-dry method and its characterization using atomic force microscopy, electron probe microscopy, photoluminescence and laser Raman spectroscopy

Behera, Debadhyan; Acharya, B. S.

doi:10.1016/j.jlumin.2008.03.006

Cited by 134 publications

(57 citation statements)

References 37 publications

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“…Please do not adjust margins between exciton level (E) and interstitial oxygen (O i ) respectively 30 . The emission band at 492 corresponds to the blue emission assigned to electron transition from Zn i level to top of the valence band.…”

Section: (B)mentioning

confidence: 99%

“…At 300 K, the increase in the PL intensity and FWHM of the blue emissions are related to the defect states correspond to the substitution of Al 3+ ion. In particular, the increase of 449 nm emission may be related to O i centers, which promotes the chemisorption of oxygen, thereby increasing the density of electronic states in the film 30 . It is found that, the defect density of electronic states of Al 3+ ion found to increase with increase of RF power due to the increase in thickness of the film and also to the increase of crystallite size.…”

Section: (B)mentioning

confidence: 99%

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Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Srinatha

Kamble³

et al. 2016

RSC Adv.

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The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with raising RF power. Besides, the increasing RF power is found to improve the crystallinity and grains growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of Al 3+ ion found to increase with increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 °C. The AZO film shows good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

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Section: (B)mentioning

confidence: 99%

Section: (B)mentioning

confidence: 99%

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Srinatha

Kamble³

et al. 2016

RSC Adv.

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“…The wide band gap IIVI compound semiconductors have attracted much attention due to their strong nonlinear optical eects and potential applications in areas of optical communication and optical computing [1]. Amongst, ZnO is currently attracting attention for applications to UV light emitters, piezoelectric and acoustic wave transducers, transparent electronics and as a window material for display and solar cells [2].…”

Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of Bismuth Doped ZnO Thin Films by Sol-Gel Method: Urbach Rule as a Function of Crystal Defects

Keskenler¹,

Aydın²,

Turgut³

et al. 2014

Acta Phys. Pol. A

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Bismuth (Bi) doped zinc oxide (ZnO:Bi) thin lms were prepared on glass substrates by solgel spin coating technique using homogeneous precursor solutions, and eects of Bi doping on the structural and optical properties of ZnO were investigated. The crystalline of ZnO lms shifted from polycrystalline nature to amorphous nature with Bi doping. The plane stresses (σ) for hexagonal ZnO and ZnO:Bi crystals were calculated according to the biaxial strain model. The Urbach rule was studied as a function of non-thermal component to the disorder (defects in crystal structures) which is especially observed in the case of non-crystal semiconductors. The calculated Urbach energies and steepness parameters of undoped ZnO and ZnO:Bi lms varied between 44.33 meV and 442.67 meV, and 58.3 × 10 −2 and 5.8 × 10 −2 , respectively. The Urbach energies of the lms increased with an increase in the Bi doping concentration and a great dierence was observed for 7.0 mol.% doping. The band gap values of the lms exhibited a uctuated behavior as a result of doping eect.

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“…These Raman active modes are ascribed to the multi-phonon process (326 cm -1 ) and the E 2 2 high phonon mode (436 cm -1 ) [13][14][15]. It is evident from Raman spectra, that the variation in the intensity of the peaks is due to the incorporation of Al 3+ .…”

Section: (C) Bright Field Micrograph and (D) Lattice Scale Image Of Amentioning

confidence: 93%

“…Moreover various emission characteristics and shifting of luminescence bands have been attributed to the fine nanocrystalline structures leading to a large surface area and defects [10][11][12]. Recently neat or undoped ZnO has also been investigated by incorporating light metal ions like Al 3+ for optical applications [13][14][15]. To this end, in the present study, we report the syntheses and characterization of Al doped ZnO nanostructures.…”

Section: Introductionmentioning

confidence: 94%

Modification at Lattice Scale for an Optimized Optical Response of Al<sub>x</sub>(ZnO)<sub>1-x</sub> Nanostructures

Srivastava¹,

Senthil²,

Deepa³

et al. 2011

WJNSE

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We report the systematic changes of nano-scaled features and optical properties in a promising transparent oxide material, namely, Al x (x = 0, 1, 2 and 5%) doped ZnO 1-x (AZO). Electron microscopy investigations revealed the alterations at lattice scale depending on the presence of Al-content in ZnO nanostructures. Lattice spacings of 0.26 and 0.28 nm oriented along the (0002) and (101 0) planes, respectively, were attributed to euhedral-and facetted-structures of hexagonal-ZnO. The AZO samples were further characterized by XRD, SEM, UV-vis spectrophotometry, Raman spectroscopy and photoluminescence studies. It has been shown that at a dopant concentration of 2% Al in ZnO, an optimal balance could be achieved between microstructure and optical properties.

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Nano-star formation in Al-doped ZnO thin film deposited by dip-dry method and its characterization using atomic force microscopy, electron probe microscopy, photoluminescence and laser Raman spectroscopy

Cited by 134 publications

References 37 publications

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Optical and Structural Properties of Bismuth Doped ZnO Thin Films by Sol-Gel Method: Urbach Rule as a Function of Crystal Defects

Modification at Lattice Scale for an Optimized Optical Response of Al<sub>x</sub>(ZnO)<sub>1-x</sub> Nanostructures

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Nano-star formation in Al-doped ZnO thin film deposited by dip-dry method and its characterization using atomic force microscopy, electron probe microscopy, photoluminescence and laser Raman spectroscopy

Cited by 134 publications

References 37 publications

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Optical and Structural Properties of Bismuth Doped ZnO Thin Films by Sol-Gel Method: Urbach Rule as a Function of Crystal Defects

Modification at Lattice Scale for an Optimized Optical Response of Al&lt;sub&gt;x&lt;/sub&gt;(ZnO)&lt;sub&gt;1-x&lt;/sub&gt; Nanostructures

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Modification at Lattice Scale for an Optimized Optical Response of Al<sub>x</sub>(ZnO)<sub>1-x</sub> Nanostructures