2011
DOI: 10.1088/0957-4484/22/17/175307
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Nano-strip grating lines self-organized by a high speed scanning CW laser

Abstract: After a laser annealing experiment on Si wafer, we found an asymmetric sheet resistance on the surface of the wafer. Periodic nano-strip grating lines (nano-SGLs) were self-organized along the trace of one-time scanning of the continuous wave (CW) laser. Depending on laser power, the nano-trench formed with a period ranging from 500 to 800 nm with a flat trough between trench structures. This simple method of combining the scanning laser with high scanning speed of 300 m min(-1) promises a large area of nanost… Show more

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Cited by 12 publications
(11 citation statements)
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“…Depending on the laser processing parameters and material, LIPPSs originate from electromagnetic effects such as the interference of the incident and surface scattered beams, or matter organization due to thermocapillary effects. [154] LIPSS on a Si surface, which was amorphized down to a depth of 250 nm by ion implantation, was demonstrated using a 532 nm CW laser and a 797 nm CW NIR laser, [155] as schematically shown in Figure 12e. The dual laser processing resulted in nanostripe grating lines (Figure 12f ) with periods adjustable in the range 530-800 nm by controlling the power of the green laser -c) Reproduced under the terms of the CC-BY license.…”
Section: Surface Nanostructures Via Laser-induced Phase and Morphological Transformationsmentioning
confidence: 99%
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“…Depending on the laser processing parameters and material, LIPPSs originate from electromagnetic effects such as the interference of the incident and surface scattered beams, or matter organization due to thermocapillary effects. [154] LIPSS on a Si surface, which was amorphized down to a depth of 250 nm by ion implantation, was demonstrated using a 532 nm CW laser and a 797 nm CW NIR laser, [155] as schematically shown in Figure 12e. The dual laser processing resulted in nanostripe grating lines (Figure 12f ) with periods adjustable in the range 530-800 nm by controlling the power of the green laser -c) Reproduced under the terms of the CC-BY license.…”
Section: Surface Nanostructures Via Laser-induced Phase and Morphological Transformationsmentioning
confidence: 99%
“…LIPSS on a Si surface, which was amorphized down to a depth of 250 nm by ion implantation, was demonstrated using a 532 nm CW laser and a 797 nm CW NIR laser, [ 155 ] as schematically shown in Figure 12e. The dual laser processing resulted in nanostripe grating lines (Figure 12f) with periods adjustable in the range 530–800 nm by controlling the power of the green laser (12–18 W), while keeping the power of the NIR laser constant.…”
Section: Laser‐processed Planar Photonic Devicesmentioning
confidence: 99%
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“…The nano-grooves were produced with a period of 500 to 800 nm which was determined by the laser power. This simple method of combining a scanning laser with a high scanning speed of 300 m min −1 was expected to generate large-area nanostructure and high output [173,174]. In 2013, S. Kaneko et al reported that periodic nanostructures self-organized on the target surface after the CW laser scanned the target at a high speed of 300 m/min.…”
Section: Laser-induced Periodic Surface Structurementioning
confidence: 99%
“…LIPSS with a spatial period in the order of the laser wavelength (Λ ≈ λ) are usually referred to as low spatial frequency LIPSS (LSFL) and those with significant smaller period (Λ λ) as high spatial frequency LIPSS (HSFL). Whereas LSFL have been studied since 1965 with continuous wave lasers [127] and different pulse durations [128,129,117], the HSFL type is more recently observed in the context of picosecond and femtosecond pulse irradiation [117,102]. For LSFL, Λ has been found to vary with the wavelength [121,92,76], the angle of incidence θ [76,114] and number of pulses [130].…”
Section: Periodic Surface Structuresmentioning
confidence: 99%