Nano-Texturing of Silicon Wafers Via One-Step Copper-Assisted Chemical Etching

Omer, Altyeb Ali Abaker; Yang, Yuanyuan; Sheng, Guizhang; Li, Shaoyuan; Yu, Jie; Ma, Wenhui; Qiu, Jiajia; Kolaly, Wael El

doi:10.1007/s12633-019-00117-5

Cited by 12 publications

(4 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, the average reflectivity of the IP textured wafers decreased to 8.26, 7.8 and 5.6% at 50, 55 and 60°C, respectively. Generally, the etching rate increased with respect to the increases in reaction temperature [22]. These figures likely take on their characteristics due to temperature varying the rate of hole injection.…”

Section: Resultsmentioning

confidence: 95%

“…For instance, there are considerably fewer available electrons on the (111) Si plane than the (100) plane. Therefore, nucleation of Cu 2+ ions on (100) Si has a higher electron capture probability [22,30]. Fig.…”

Section: Resultsmentioning

confidence: 98%

“…2. As previously reported [20,22], the mechanism of the MCCE process has been explained by the following equations:…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

Kubendhiran

Sison

Hsu

et al. 2020

Silicon

View full text Add to dashboard Cite

Inverted pyramid (IP) texturization on silicon wafers has recently attracted attention for the structure's light trapping ability and low specific surface area. The later property minimizes undesired carrier recombination for solar cells. Wet chemical etching methods based on alkaline and/or acidic etching have been found to be relatively cost effective for creating microscale IPs, and therefore have great potential for mass production. Metal catalytic chemical etching (MCCE) using acidic solutions is known to create these structures in the shortest timespan. In this work, we proposed a simple MCCE IP texturization method for (100) single crystalline silicon (sc-Si) using a Cu(SO 4 )/HF/H 2 O 2 /H 2 O solution in a bubbling bath. The experiment was performed with different etching times, concentrations of H 2 O 2 , and temperatures. As a unique design consideration, our process was conducted with a continuous flow of nitrogen gas bubbles to improve etching uniformity. Under optimized conditions, etching was demonstrated for full size wafers. In checking solution stability, it was found that hydrogen peroxide evaporation occurs throughout the entire process, significantly affecting etching rates and microstructure formation. Therefore, the continuous makeup of H 2 O 2 would be necessary for industrial production.

show abstract

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 98%

See 1 more Smart Citation

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

Kubendhiran

Sison

Hsu

et al. 2020

Silicon

View full text Add to dashboard Cite

show abstract

“…However, since bulk Si is an indirect band‐gap semiconductor with a low electron‐hole recombination efficiency and shows very ineffective light emission, the fabrication of efficient Si‐based light‐emitting devices remains a huge challenge [4,5]. Nanostructured Si, in particular, porous silicon (PSi), has attracted extraordinary attentions, due to its strong visible photoluminescence at room temperature, which unlocks the application suppression of silicon as efficient luminescence devices [6–9]. Numbers of researches mainly focused on PSi fabrication and application due to its excellent properties, such as photo/electroluminescence, huge specific surface area, convenient and adjustable physical and chemical properties, as well as compatibility with biological tissues [10].…”

Section: Introductionmentioning

confidence: 99%

Porous Silicon Fabrication and Surface Cracking Behavior Research Based on Anodic Electrochemical Etching^▴

Yang

Chen

et al. 2020

Fuel Cells

View full text Add to dashboard Cite

Porous silicon (PSi) was fabricated based on anodic electrochemical etching, and the relationship between preparation conditions, nanostructure and PSi surface crack behavior were systematically studied. The effects of silicon wafer resistivity (doping concentration), etching time, and etching current density on nanostructure of PSi were investigated. Results indicated that lower resistivity was beneficial to etching process and led to higher porosity with uniform nano‐channels, and surface crack was more intense during drying process. Thickness and porosity of the porous layer are both initially increased and then decreased with increasing etching time. Direction of capillary stress depended on pore geometry, which further affected crack shape (shrinkage or crimp) of surface layer of PSi. Cracking extent was controlled by porosity, that the surface cracking layer began to peel off when the porosity exceeded 70%. Finally, a geometry and porosity‐controlled model was proposed to describe the cracking behaviors of PSi surface layer.

show abstract

Diverse Texturing Characteristics Through Metal-Assisted Plasma Etching with Silver Nanowires

Lee,

Ryu,

Jin

et al. 2024

Plasma Chem Plasma Process

View full text Add to dashboard Cite

Nano-Texturing of Silicon Wafers Via One-Step Copper-Assisted Chemical Etching

Cited by 12 publications

References 36 publications

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

Porous Silicon Fabrication and Surface Cracking Behavior Research Based on Anodic Electrochemical Etching^▴

Diverse Texturing Characteristics Through Metal-Assisted Plasma Etching with Silver Nanowires

Contact Info

Product

Resources

About

Nano-Texturing of Silicon Wafers Via One-Step Copper-Assisted Chemical Etching

Cited by 12 publications

References 36 publications

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

Copper Assisted Inverted Pyramids Texturization of Monocrystalline Silicon in a Nitrogen Bubbling Bath for Highly Efficient Light Trapping

Porous Silicon Fabrication and Surface Cracking Behavior Research Based on Anodic Electrochemical Etching▴

Diverse Texturing Characteristics Through Metal-Assisted Plasma Etching with Silver Nanowires

Contact Info

Product

Resources

About

Porous Silicon Fabrication and Surface Cracking Behavior Research Based on Anodic Electrochemical Etching^▴