Nano-X-ray Absorption Spectroscopy of Single Co-Implanted ZnO Nanowires

Segura-Ruíz, Jaime; Martı́nez-Criado, Gema; Chu, M. H.; Geburt, Sebastian; Ronning, Carsten

doi:10.1021/nl202799e

Cited by 71 publications

(64 citation statements)

References 36 publications

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“…Segura-Ruiz and coworkers [80] used a hard X-ray nanoprobe to investigate the local structure of single Coimplanted ZnO NWs with a Co concentration of 0.6 at.% relative to Zn. The monochromatic X-ray beam was focused to 100 nm × 100 nm spot size with ~10 11 ph/s using a pair of Kirkpatrick-Baez Si mirrors.…”

Section: Magnetic Semiconductor Nanostructuresmentioning

confidence: 99%

X-ray absorption fine structure spectroscopy in nanomaterials

et al. 2015

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X-ray absorption fine structure (XAFS) spectroscopy has been widely used for decades in a wide range of scientific fields, including physics, chemistry, biology, materials sciences, environmental sciences, etc. This review article is devoted to the applications of XAFS in nanomaterials. The basic principles of XAFS are briefly described from the view point of practical application, including its theory, data analysis and experiments. Using selected examples from recent literatures, the power of XAFS in determination of local atomic/electronic structures is illustrated for various nanomaterials, covering metal and semiconductor nanoparticles, catalysts, core/shell structures, ultrathin nanosheets, and so on. The utilization of time-resolved XAFS technique is also briefly introduced, for in-situ probing the nucleation/growth processes of nanomaterials and identifying reaction intermediates of nanostructured catalysts under operando conditions.

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Section: Magnetic Semiconductor Nanostructuresmentioning

confidence: 99%

X-ray absorption fine structure spectroscopy in nanomaterials

et al. 2015

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“…Synchrotron X-ray absorption near edge structure and extended X-ray absorption fine structure data have been used for lattice site location measurements in NWs 30 . In Ga 2 O 3 NWs we applied the Perturbed Angular Correlation (PAC) technique to infer, particularly, on the lattice site of implanted radioactive 111m Cd probes 19 , being Cd in this case a conceptually interesting p-type dopant.…”

Section: Lattice Site Location Of Implanted 111mentioning

confidence: 99%

Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Lorenz¹,

Peres²,

Felizardo³

et al. 2014

SPIE Proceedings

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Ga 2 O 3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1×10 13 to 4×10 15 at/cm 2 . The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channeling mode (RBS/C). RBS/C results suggest that implantation causes a mixture of defect clusters and extended defects such as dislocations. Amorphisation starts at the surface for fluences around 1×10 15 at/cm 2 and then proceeds to deeper regions of the sample with increasing fluence. Amorphous regions and defect clusters are efficiently removed during rapid thermal annealing at ~1100 ºC; however, Eu diffuses towards the surface. Nevertheless, Eu ions are optically activated and show cathodoluminescence at room temperature. Results in bulk samples are compared to those in Eu-implanted Ga 2 O 3 nanowires and despite strong similarities in the structural properties differences were found in the optical activation. Furthermore, damage and dopant incorporation studies were performed using the Perturbed Angular Correlation technique, which allows probing the immediate lattice surroundings of an implanted radioactive probe at the atomic level.

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“…Traditionally, destructive techniques based on transmission electron microscopy (TEM) have been the methods of choice to analyse their crystal perfection, composition and strain123. With the advent of nanofocused X-ray beams45678910 and advanced X-ray diffraction (XRD) imaging techniques111213141516 available at third-generation synchrotrons it has become possible to address individual crystals down to the nanoscale non-destructively. The role of strain induced by lattice misfit in determining the properties of epitaxial heterostructures and nanostructures can hardly be overemphasized.…”

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confidence: 99%

Perfect crystals grown from imperfect interfaces

Falub

Meduňa

Chrastina

et al. 2013

Sci Rep

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The fabrication of advanced devices increasingly requires materials with different properties to be combined in the form of monolithic heterostructures. In practice this means growing epitaxial semiconductor layers on substrates often greatly differing in lattice parameters and thermal expansion coefficients. With increasing layer thickness the relaxation of misfit and thermal strains may cause dislocations, substrate bowing and even layer cracking. Minimizing these drawbacks is therefore essential for heterostructures based on thick layers to be of any use for device fabrication. Here we prove by scanning X-ray nanodiffraction that mismatched Ge crystals epitaxially grown on deeply patterned Si substrates evolve into perfect structures away from the heavily dislocated interface. We show that relaxing thermal and misfit strains result just in lattice bending and tiny crystal tilts. We may thus expect a new concept in which continuous layers are replaced by quasi-continuous crystal arrays to lead to dramatically improved physical properties.

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Nano-X-ray Absorption Spectroscopy of Single Co-Implanted ZnO Nanowires

Cited by 71 publications

References 36 publications

X-ray absorption fine structure spectroscopy in nanomaterials

X-ray absorption fine structure spectroscopy in nanomaterials

Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Perfect crystals grown from imperfect interfaces

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Nano-X-ray Absorption Spectroscopy of Single Co-Implanted ZnO Nanowires

Cited by 71 publications

References 36 publications

X-ray absorption fine structure spectroscopy in nanomaterials

X-ray absorption fine structure spectroscopy in nanomaterials

Doping of Ga2O3bulk crystals and NWs by ion implantation

Perfect crystals grown from imperfect interfaces

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Product

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Doping of Ga₂O₃bulk crystals and NWs by ion implantation