We investigate the influence of carbon-ion irradiation on the superconducting critical properties of MgB 2 thin films. MgB 2 films of two thicknesses viz. 400 nm (MB400nm) and 800 nm (MB800nm) were irradiated by 350 keV C ions having a wide range of fluence, 1 10 13 -1 10 15 C atoms/cm 2 . The mean projected range (R p ) of 350 keV C ions in MgB 2 is 560 nm, thus the energetic C ions will pass through the MB400nm, whereas the ions will remain into the MB800nm. The superconducting transition temperature (T c ), upper critical field (H c2 ), c-axis lattice parameter, and corrected residual resistivity (ρ corr ) of both the films showed similar trends with the variation of fluence. However, a disparate behavior in the superconducting phase transition was observed in the MB800nm when the fluence was larger than 110 14 C atoms/cm 2 because of the different T c s between the irradiated and non-irradiated parts of the film.Interestingly, the superconducting critical properties, such as T c , H c2 , and J c , of the irradiated MgB 2 films, as well as the lattice parameter, were almost restored to those in the pristine state after a thermal annealing procedure. These results demonstrate that the atomic lattice distortion induced by C-ion irradiation is the main reason for the change in the superconducting properties of MgB 2 films.