Abstract:The assembly of quantum nanophotonic systems with plasmonic resonators is important for fundamental studies of single photon sources as well as for on-chip information processing. In this work, we demonstrate the controllable nanoassembly of gold nanospheres with ultra-bright narrow-band quantum emitters in 2D layered hexagonal boron nitride (hBN). We utilize an atomic force microscope (AFM) tip to precisely position gold nanospheres to close proximity to the quantum emitters and observe the resulting emission… Show more
“…The presence of fewer metastable states with shorter life time makes the emitter brighter than the emitter having more metastable states with long lifetimes. Figure 9 Correlation measurements over a long time scale, pictographic representation of emitter level structure 96 , schematics of two laser excitation 113 , plasmonic coupling 114 , external strain 78 , electric 118 and magnetic field 57 inducements and ionic liquid devices 97 , off and on-resonant excitation 116 PL maps and corresponding PL spectrums of quantum emission enhancement techniques. ( a ) Second order autocorrelation measurements performed over a long time scale, three exponential components best fits for autocorrelation curve which indicates the presence of metastable states between ground and excited states.…”
Section: Photophysics Of Hbn Quantum Emittersmentioning
Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter’s fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.
“…The presence of fewer metastable states with shorter life time makes the emitter brighter than the emitter having more metastable states with long lifetimes. Figure 9 Correlation measurements over a long time scale, pictographic representation of emitter level structure 96 , schematics of two laser excitation 113 , plasmonic coupling 114 , external strain 78 , electric 118 and magnetic field 57 inducements and ionic liquid devices 97 , off and on-resonant excitation 116 PL maps and corresponding PL spectrums of quantum emission enhancement techniques. ( a ) Second order autocorrelation measurements performed over a long time scale, three exponential components best fits for autocorrelation curve which indicates the presence of metastable states between ground and excited states.…”
Section: Photophysics Of Hbn Quantum Emittersmentioning
Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter’s fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.
“…This resulted in a factor of two reduction in the lifetime and saturation count rates of single emitters compared to the same emitters uncoupled [156]. In [157] a nanoassembly of gold nanospheres is shown with ultrabright narrowband quantum emitters in h-BN using an atomic force microscope (AFM) tip to precisely position the gold nanospheres in proximity to the quantum emitters. The plasmonic resonance permits observation of a PL enhancement and lifetime reduction, with a radiative QE of up to 40% and a saturated count rate above 5 Mcts/s.…”
Single-photon sources and their optical spin readout are at the core of applications in quantum communication, quantum computation, and quantum sensing. Their integration in photonic structures such as photonic crystals, microdisks, microring resonators, and nanopillars is essential for their deployment in quantum technologies. While there are currently only two material platforms (diamond and silicon carbide) with proven single-photon emission from the visible to infrared, a quantum spin–photon interface, and ancilla qubits, it is expected that other material platforms could emerge with similar characteristics in the near future. These two materials also naturally lead to monolithic integrated photonics as both are good photonic materials. While so far the verification of single-photon sources was based on discovery, assignment and then assessment and control of their quantum properties for applications, a better approach could be to identify applications and then search for the material that could address the requirements of the application in terms of quantum properties of the defects. This approach is quite difficult as it is based mostly on the reliability of modeling and predicting of color center properties in various materials, and their experimental verification is challenging. In this paper, we review some recent advances in an emerging material, low-dimensional (2D, 1D, 0D) hexagonal boron nitride (h-BN), which could lead to establishing such a platform. We highlight the recent achievements of the specific material for the expected applications in quantum technologies, indicating complementary outstanding properties compared to the other 3D bulk materials.
“…The origin of the single‐photon emission was recently attributed to the negatively charged defect from carbon implantation. [ 6 ] The performance of the single‐photon emitting defects in hBN have been studied extensively, they show high quantum efficiency and brightness, [ 7 ] in addition to being stable [ 1 ] and highly polarized both in emission and absorption. [ 8 ]…”
Hybrid integration provides an important avenue for incorporating atom‐like solid‐state single‐photon emitters into photonic platforms that possess no optically‐active transitions. Hexagonal boron nitride (hBN) is particularly interesting quantum emitter for hybrid integration, as it provides a route for room‐temperature quantum photonic technologies, coupled with its robustness and straightforward activation. Despite the recent progress of integrating hBN emitters in photonic waveguides, a deterministic, site‐controlled process remains elusive. Here, the integration of selected hBN emitter in silicon nitride waveguide is demonstrated. A small misalignment angle of 4° is shown between the emission‐dipole orientation and the waveguide propagation direction. The integrated emitter maintains high single‐photon purity despite subsequent encapsulation and nanofabrication steps, delivering quantum light with zero delay second order correlation function g(2)false(0false)=0.1±0.05. The results provide an important step toward deterministic, large scale, quantum photonic circuits at room temperature using atom‐like single‐photon emitters.
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