networks and interconnects, [2,3] quantum interference device, [4] photodetector, [5] and phototransistor. [6] In particular, the arch shape enables it to avoid short-circuit and any other physical nano-obstacles in nanodevices.In last few decades, quite a few researchers have fabricated nanobridges successfully following different methods:(1) molecular beam epitaxy (MBE): archshaped nanobridge with height (h) and span (S) ≈ 2 µm; [3] (2) electron beam lithography (EBL): straight nanobridge with S ≈ 2 µm; [4,7] (3) chemical-mechanical polishing (CMP): straight nanobridge with h ≈ 20 nm and S ≈ 1 µm; [8] (4) metalinduced growth: straight nanobridge with S ≈ 1 µm; [2] (5) thermal oxidation: straight nanobridge with S ≈ 200 nm; [5] (6) vaporliquid-solid growth: straight nanobridge with S ≈ 4-11 µm. [6] EBL, MBE, and CMP provide high accuracy in spatial position selection of the nanobridges, but they involve highly expensive and complex experimental setup. The other methods, which are mentioned above, are relatively less expensive but can hardly be applied for precisely positioning the nanobridges and also have limited flexibility in terms of deciding the height and span, which limits their applicability. Moreover, most of these methods are utilized for fabrication of straight nanobridges and not suitable for fabrication of arch-shaped nanobridges. Although Lewis et al., [3] have reported fabrication of arch nanobridges utilizing an innovative method of strain engineering, it necessitates complex growth of two lattice mismatched and highly asymmetric core-shell structures using MBE. Therefore, it is of great interest to develop a relatively simpler method to fabricate arch-shaped nanobridges.In this article, we demonstrate fabrication of multilayered arch nanobridges and nanocantilevers by utilizing photothermal-induced nanobonding technique. To realize the fabrication of an arch nanobridge with a relatively simple method, we improvised a technique where we raise the central part of a metal nanowire (NW) in an arch form using a nanofiber and fix the two ends on two different electrodes by continuous wave (CW) laser based photothermal-induced nanobonding technique which provides many advantages over other techniques (thermal, [9] photothermal, [10][11][12][13][14][15][16][17][18] capillarity-driven, [19,20] chemical, [21][22][23] electrochemical, [24] stretch-induced, [25][26][27][28] mechanical pressing, [29] nanosoldering, [30][31][32] and Joule heating. [33,34] ) in terms of relatively simple experimental setup, spatial position selection, noncontact handling, and cost effectiveness. [35][36][37] Construction of multilayered arch nanobridges and nanocantilever structures consisting of silver nanowires using a photothermal-induced nanobonding technique is demonstrated. The fabricated nanobridges are of different height (300 nm to 20 µm) and span (25-70 µm). Their current-voltage characteristic curves indicate superior electrical connection between the metal nanowires and the abutments (gold thin film). Moreover, sup...
