Search citation statements
Paper Sections
Citation Types
Year Published
Publication Types
Relationship
Authors
Journals
Evolving material science and device architectures continue to drive improvements in photovoltaic solar cell performance. Herein, the synthesis and application of p‐type transparent copper–zinc–sulfide (Cu–Zn–S) nanocomposite thin films for application as a semi‐transparent back buffer layer for cadmium telluride (CdTe) photovoltaics is reported. Earth‐abundant and low‐toxicity Cu–Zn–S films are prepared at room temperature using successive ionic layer adsorption and reaction (SILAR). Transparency in the range of 500–800 nm, low resistivity, and composition‐controlled bandgap energy offer a compelling material system for high performance as an electron reflector enabling bifacial cell design. Implementing the Cu–Zn–S hole transport material (HTM) at the CdTe back contact, without intentional introduction of Cu doping, converts simulated AM1.5 sunlight to electricity at an efficiency up to 13.2%, with an average device performance of 13.0%. Intentional Cu doping yields a best efficiency of 14.3% with open‐circuit voltage (VOC) of 848 mV and fill factor (FF) of 77.3% (average 14.1%). Our study shows the clear promise of this material for highly efficient and semi‐transparent back contact to CdTe solar cells.
Evolving material science and device architectures continue to drive improvements in photovoltaic solar cell performance. Herein, the synthesis and application of p‐type transparent copper–zinc–sulfide (Cu–Zn–S) nanocomposite thin films for application as a semi‐transparent back buffer layer for cadmium telluride (CdTe) photovoltaics is reported. Earth‐abundant and low‐toxicity Cu–Zn–S films are prepared at room temperature using successive ionic layer adsorption and reaction (SILAR). Transparency in the range of 500–800 nm, low resistivity, and composition‐controlled bandgap energy offer a compelling material system for high performance as an electron reflector enabling bifacial cell design. Implementing the Cu–Zn–S hole transport material (HTM) at the CdTe back contact, without intentional introduction of Cu doping, converts simulated AM1.5 sunlight to electricity at an efficiency up to 13.2%, with an average device performance of 13.0%. Intentional Cu doping yields a best efficiency of 14.3% with open‐circuit voltage (VOC) of 848 mV and fill factor (FF) of 77.3% (average 14.1%). Our study shows the clear promise of this material for highly efficient and semi‐transparent back contact to CdTe solar cells.
PV technologies need to advance further in terms of a substantial increase in PV module power generation, reduction in module prices, and improvement in long-term reliability, eventually realizing low levelized costs of electricity (LCOE) that are compatible with standard electricity prices in the energy market. The PV industry's future development necessitates increased attention to emerging techniques with the potential to achieve high power generation at low costs.Increasing the power output per unit area of solar panels at low additional manufacturing costs is crucial for further lowering the PV-generated electricity price. One of the simplest and inexpensive strategies for increasing the power output density of a solar panel is to harvest reflected and diffuse sunlight from the ground by employing bifacial designs. The concept of bifacial solar cells can date back to the 1960s, but the momentum to bring bifacial solar panels to the market has been gradually realized in the last decade as one of the latest technological advances in PV manufacturing. [4] The mainstream crystalline silicon (c-Si) PV module manufacturers are now producing bifacial silicon solar modules based on different cell technologies. The trend shows that bifacial solar cells and modules are increasingly important in today's PV market and may soon become the cost-effective PV standard. [5] Unlike c-Si solar cells, efficient bifacial designs have not been demonstrated in commercial inorganic thin-film PV technologies because the polycrystalline inorganic thin films suffer from short carrier lifetimes and high rear surface recombination, limiting their bifacial PV performance. Metal halide perovskite solar cells (PSCs) have generated great interest in the PV research and industry, owing to their fast-growing power conversion efficiencies (PCEs), [6] outstanding optoelectronic properties, [7] ease of production, [8] low estimated manufacturing costs, [9] and readiness to take steps toward commercialization. [10] Within a decade, PSCs have rapidly evolved from a newcomer to a leading competitor to rival other established PV technologies.The development of PSCs opens up a golden opportunity to realize efficient bifacial thin-film solar cells. Figure 1 depicts the bifacial architecture for PSCs, summarizes the unique optoelectronic properties of perovskites that enable high bifacial performance, and highlights the advantages of bifacial Bifacial solar cells hold the potential to achieve a higher power output per unit area than conventional monofacial devices without significantly increasing manufacturing costs. However, efficient bifacial designs are challenging to implement in inorganic thin-film solar cells because of their short carrier lifetimes and high rear surface recombination. The emergence of perovskite photovoltaic (PV) technology creates a golden opportunity to realize efficient bifacial thin-film solar cells, owing to their outstanding optoelectronic properties and unique features of device physics. More importantly, transparent cond...
Thin film solar cells, as a complement to silicon solar cells, are expected to play a significant role in the space industry, building integrated photovoltaic (BIPV), indoor applications and tandem solar cells, where bifaciality and semitransparency are highly desired. Sb2(S,Se)3 has emerged as a promising new photovoltaic (PV) material for its high absorption coefficient, tuneable bandgap, and non‐toxic and earth‐abundant constituents. However, high‐efficiency Sb2(S,Se)3 solar cells so far exclusively employ gold back contacts or Mo‐coated glass substrates, which only allows monofacial architectures, leaving a considerable gap towards large‐scale application in aforementioned fields. Here, we report a bifacial and semitransparent Sb2(S,Se)3 solar cell enabled by a fluorine‐doped tin oxide substrate and an indium tin oxide (ITO) back contact, and its extended application in tandem solar cells. The transparent conductive oxides (TCOs) and the ultra‐thin inner n‐i‐p structure provide high transmittance at the long wavelength region. Despite of the unfavourable Schottky junction and increased defect density at MnS/ITO interface, a power conversion efficiency (PCE) of 7.41% with only front illumination is achieved. On the other hand, though the varied carrier kinetic with rear illumination has a negative impact on the PCE, the internal ultrathin fully depleted absorber layer enables it to remain at a satisfying level at 6.36%, contributing to a great bifaciality of 0.86. As a result, our bifacial and semitransparent Sb2(S,Se)3 solar cells can gain great enhancement in PV performance by exploiting albedo of surroundings and show exceptional capability in absorbing non‐normal incident light. Moreover, our device can be integrated into a tandem solar cell with a bottom silicon solar cell owing to its adjustable bandgap. A Sb2(S,Se)3/Si tandem solar cell with PCE of 11.66% is achieved in our preliminary trial. These exciting findings imply that bifacial and semitransparent Sb2(S,Se)3 solar cells possess tremendous potential in practical applications based on their unique characteristics.This article is protected by copyright. All rights reserved
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.
Copyright © 2025 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.