2020
DOI: 10.1016/j.mssp.2020.105289
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Nanocomposite thick films of CsPbI3: PVDF-HFP on plastics for direct conversion low-dose X-ray sensor

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Cited by 15 publications
(4 citation statements)
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“… Material Sensitivity (µC Gy −1 cm −3 ) X-ray tube voltage (kV) Dose rate (mGy s −1 ) Voltage/electric field Ref. CsPbI 3 : PVDF-HFP 4.7 70 2.5 2 V [ 24 ] BiI 3 0.053 70 2.5 2 V [ 25 ] Bi 5 O 7 I 1.926 70 2.5 2 V [ 26 ] TMCM-CdCl 3 128.9 ± 4.64 µC Gy −1 cm −2 40 1.06 µGy −1 s −1 10 V [ 27 ] ω-Bi 2 O 3 3.077 μCGy −1 cm −2 60 56.95 μGy −1 s −1 20 V [ 28 ] CsPbI 3 83.6 μC Gy −1 cm −2 60 1.7 0.17 V μm −1 [ 29 ] Y 2 O 3 (high temp.) 0.143 70 2.5 2 V [ …”
Section: Resultsmentioning
confidence: 99%
“… Material Sensitivity (µC Gy −1 cm −3 ) X-ray tube voltage (kV) Dose rate (mGy s −1 ) Voltage/electric field Ref. CsPbI 3 : PVDF-HFP 4.7 70 2.5 2 V [ 24 ] BiI 3 0.053 70 2.5 2 V [ 25 ] Bi 5 O 7 I 1.926 70 2.5 2 V [ 26 ] TMCM-CdCl 3 128.9 ± 4.64 µC Gy −1 cm −2 40 1.06 µGy −1 s −1 10 V [ 27 ] ω-Bi 2 O 3 3.077 μCGy −1 cm −2 60 56.95 μGy −1 s −1 20 V [ 28 ] CsPbI 3 83.6 μC Gy −1 cm −2 60 1.7 0.17 V μm −1 [ 29 ] Y 2 O 3 (high temp.) 0.143 70 2.5 2 V [ …”
Section: Resultsmentioning
confidence: 99%
“…The obtained samples were initially polished with a sandpaper grit size of 320, 600, 1000, and 2000 and then chemically etched using 1:4:5 hydrofluoric acid, nitric acid and DI water. 35,36 The etching time for all the samples was the 30 s. The anodization process was then carried out in two-stages. The voltage was manually tuned from 0 V to 30 V and was maintained for 30 min.…”
Section: Methodsmentioning
confidence: 99%
“…The contact angle can see that anodized samples 1,2,3 and 4 with nanotube length of 1,1.5, 2.5 and 1.6 mm respectively showed the contact angle degrees as 128 � , 118 � , 49, and 92.806 � (Figure 5 morphologies would improve the osteoblast behavior and enhance the osseointegration. 36…”
Section: Wetting Behaviormentioning
confidence: 99%
“…Recently, our research group has explored the possibility of utilizing semiconductors such as Cu 2 HgI 4 [9], CsPbI 3 [10], BiOI [11] and Zn(Cu)O [12] for direct conversion low-dose (mGy) x-ray sensors based on the x-ray-induced photocurrent measurements under biased condition. In general, a semiconductor with high x-ray attenuation is an ideal candidate for such sensor development.…”
Section: Introductionmentioning
confidence: 99%