A rapid
and efficient methodology for the evaluation of band gaps
of semiconductors is highly desirable to analyze and assess the intrinsic
properties and extending application scopes of semiconductor materials.
Here, the negative correlation of the cataluminescence (CTL) signal
in the presence of H2S and the band gap of Aurivillius-type
perovskite oxide Bi4+n
Fe
n
Ti3O12+3n
(n = 1–4) was confirmed, where the H2S-induced CTL
signal acts as a probe to evaluate the band gaps of semiconductor
materials. The related mechanism shows that the thermal energy obtained
by heating makes the electrons in the valence band more easily excite
into the conduction band of a narrower band gap material and further
promotes electron transfer between the gaseous compounds and semiconductor
materials, causing acceleration of the catalytic oxide process. In
addition, the extensibility was further verified by exploring the
layered perovskite containing other insertion structures, including
Bi4+n
Co
n
Ti3O12+3n
(n = 1–4),
Bi5NiTi3O15, and Bi5MnTi3O15, which was also consistent with the results
characterized by UV diffuse reflectance spectroscopy. The established
CTL probe for band gap evaluation shows rapid response, is simple
to operate, and is of low cost, which is expected to become an innovative
alternative to the conventional band gap assessment approach.