Nanocrystal size modifications in porous silicon by preanodization ion implantation

Abstract

A tuning of the nanocrystal sizes in porous silicon has been obtained by self-ion implantation in p-type silicon wafers before the anodization treatment. Sample porosity, luminescence spectra, Raman scattering, and transmission electron microscopy have been used to determine the structure of porous silicon samples. A porosity increase, a blue shift of the luminescence peak, a widening of the phonon resonance, and a decrease in the size features revealed by transmission electron microscopy (TEM) images are observed by increasing the ion implantation dose. It is suggested that this effect results from the increased resistivity of the Si wafer caused by the ion implantation damage.

Size dependence of nanostructures: Impact of bond order deficiency

“…Data-1 [458], data-2 [516], data-3 [509], data-4 [517], data-5 [518], data-6 [519], data-7 [520], and data-8 [515] are calculation results. Data-9 [515], data-10 [513], data-11 [478], data-12 [521], and data-13 [45] are measurements. (c) The E Gexpansion measured using STS [48] and optical method, data-1 (E G ¼ E PA e W ) [456] and data-2 (…”

Preparation and Characterization of Freestanding Porous Silicon Films with High Porosities

“…9,[22][23][24] Here, in order to illustrate the influence on the structure of the ps films by a chemical dissolving process, we also evaluate the average diameters of the nanometer particles in freestanding ps films using Raman scattering spectroscopy. Figure 2 shows three Raman spectra of freestanding ps films with porosities of 79, 83, and 91%.…”

Thermal Properties of Porous Silicon

“…Ion implantation affects the conditions of PSi formation (Ambrazevicius et al 1994;Pavesi et al 1994;Ahmad and Naddaf 2011;Ow et al 2011). For example, Pavesi et al (1994) suggested that the porosity of silicon could be controlled by implanting Si ions into the initial wafer. Later, Manuaba et al (2001) found that the MeV energy He implant accelerates the etching process, probably due to the bubbles or the remaining lattice damage.…”

“…The modification of the initial silicon surface (prior to the anodic treatment) by ion implantation also is an effective method for controlling the luminescent properties of PSi (Pavesi et al 1994;Liao et al 1995;Wu et al 1996;Piryatinskii et al 2000). For example, Piryatinskii et al (2000) established that the samples implanted with B + ions exhibit a very sharp increase in the PL intensity at 450 nm after rapid thermal annealing (RTA).…”