Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocomposites via Transamination of [M(NMe2)3]2, M = Al, Al/Ga (1/1)

Janik, Jerzy F.; Wells, Richard L.; Coffer, Jeffery L.; John, John V. St.; Pennington, William T.; Schimek, George L.

doi:10.1021/cm9708067

Cited by 62 publications

(49 citation statements)

References 31 publications

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“…In the related area, numerous metal (trimethylsilyl)amides M[N(Si(CH 3 ) 3 ) 2 ] n , M = metal, upon reactions with ammonia have been useful precursors to metal nitride nanoparticles via thermal decomposition/ deamination of the postulated metal amides M(NH 2 ) n as outlined in a recent review [32]. Analogous chemistry was also successfully explored by some of us to prepare nanocrystalline powders of gallium nitride GaN [33][34][35], aluminum nitride AlN [36,37], and titanium nitride TiN [38,39] 2 ] 2 , in the system with ammonia was successfully used to make thin films of mixed-phase manganese nitrides, possibly, via transamination and subsequent deamination reactions of the transient manganese amide/imide [23]. The Mn[N(Si(CH 3 ) 3 ) 2 ] 2 itself was applied as a volatile precursor for deposition of thin films of metallic manganese [40][41][42].…”

Section: Resultsmentioning

confidence: 99%

Convenient synthesis of nanocrystalline powders of phase-pure manganese nitride η-Mn3N2

et al. 2016

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Manganese bis(trimethylsilyl)amide Mn[N(Si(CH 3 ) 3 ) 2 ] 2 was used as a convenient material precursor to prepare pure manganese nitride nanopowders with reaction-controlled average crystallite sizes. The precursor was first reacted with liquid ammonia under reflux conditions and the resulting by-product was pyrolyzed under an ammonia flow at temperatures in the range 150-900°C. The powder products were characterized mainly by powder X-ray diffraction (XRD) diffraction, SEM/EDX examinations, and FT-IR and micro-Raman spectroscopies. In all cases, a pure phase of nanocrystalline g-Mn 3 N 2 was detected by XRD as the exclusive manganese nitride product. The compound's nanopowders were extremely reactive toward air. Upon oxidation, they formed either MnO for a relatively better crystallized nitride from higher synthesis temperatures or Mn 3 O 4 after self-ignition of a poorly crystalline nitride from a lower synthesis temperature.

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Section: Resultsmentioning

confidence: 99%

Convenient synthesis of nanocrystalline powders of phase-pure manganese nitride η-Mn3N2

et al. 2016

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“…Bis(trimethylamino)gallane is a well known precursor used in the synthesis of GaN. [28] Gallium alkoxide complexes were successfully used as precursors for gallium oxide films deposited via a chemical vapour reaction. [25] For the formation of GaON solid solutions, the main parameters for optimizing the appropriate pyrolysis gas composition were the final carbon, nitrogen and oxygen contents in the pyrolyzed samples.…”

Section: Resultsmentioning

confidence: 99%

Advances in Gallium Oxonitride Ceramics: A New Class of Materials in the System Ga‐O‐N

2005

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This research news highlights the history, synthesis and new developments of gallium oxonitride phases. Many practical applications are expected of this class of materials because of its analogy to aluminium oxonitride phases. A new approach to gallium oxonitride ceramics is a synthesis pathway starting from a precursor that provides gallium simultaneously bonded to nitrogen and oxygen on a molecular level. One suitable precursor is the dimethylamine adduct of gallium tris‐(t‐butoxide), Ga(OtBu)3·HNMe2. The optimization of the pyrolysis process was controlled by analyzing the nitrogen to oxygen content and the reduction of carbon content in the ceramic. The samples were investigated using FTIR spectroscopy and elemental analysis. The degree of crystallinity was determined by transmission electron microscopy in combination with an electron energy loss spectrometer. The precursor‐derived gallium oxonitride ceramic remains nanocrystalline up to 600 °C and reacts to GaN with the wurtzite type structure by loss of all oxygen in an ammonia atmosphere at temperatures above 600 °C.

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“…Nanocrystalline GaN powder used for sintering was synthesized by pyrolysis of the gallium imide precursor [11][12][13]. The GaN nanopowder were obtained by anaerobic imide route using the pyrolysis temperature was 900°C for 6 h [11][12][13].…”

Section: Methodsmentioning

confidence: 99%

“…The GaN nanopowder were obtained by anaerobic imide route using the pyrolysis temperature was 900°C for 6 h [11][12][13]. Then the GaN nanopowder was sintered for 10 min in a high pressure torroid cell at 900°C and at the pressure 6 GPa [14].…”

Section: Methodsmentioning

confidence: 99%

TEM investigations of GaN layers grown on silicon and sintered GaN nano‐ceramic substrates

Borysiuk¹,

Caban

Strupiński

et al. 2007

Cryst. Res. Technol.

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GaN nano-ceramics were analyzed using transmission electron microscopy (TEM), showing that these ceramics are characterized by highly disoriented grains of the linear size of 100-150 nm. These GaN ceramics were used as substrates for GaN epitaxy in standard MOVPE conditions. For the comparison, MOVPE GaN layers on silicon substrates were grown using similar conditions. It is shown that MOVPE growth of GaN layers is highly anisotropic for both cases. However, the disorientation of the highly mismatched GaN layer on silicon is different from that characterizing GaN layer deposited on the ceramic substrate. In the latter case the disorientation is much higher, and three dimensional in nature, causing creation of polycrystalline structure having large number of the dislocations. In the case of the GaN layer grown on the silicon substrate the principal disorientation is due to rotation around c-axis, causing creation of mosaic structure of edge dislocations. Additionally, it is shown that the typical grain size in AlN nucleation layer on Si is smaller, of order of 20 nm. These two factors contribute to pronounced differences in later stage of the growth of GaN layer on the ceramic. Due to high growth anisotropy an appropriately thick GaN layer can, eventually, develop flat surfaces suitable for construction of optoelectronic and electronic structures. As shown by the TEM data, this can be achieved only at the cost of creation of the relatively large density of dislocations and stacking faults. The latter defects were not observed for the GaN growth on Si substrates.

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Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocomposites via Transamination of [M(NMe₂)₃]₂, M = Al, Al/Ga (1/1)

Cited by 62 publications

References 31 publications

Convenient synthesis of nanocrystalline powders of phase-pure manganese nitride η-Mn3N2

Convenient synthesis of nanocrystalline powders of phase-pure manganese nitride η-Mn3N2

Advances in Gallium Oxonitride Ceramics: A New Class of Materials in the System Ga‐O‐N

TEM investigations of GaN layers grown on silicon and sintered GaN nano‐ceramic substrates

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