Nanocrystalline cobalt-based films with high thermal stability from a single molecule

Abstract

Articles you may be interested inMagnetic permeability of Si-rich (FeCoNi)-based nanocrystalline alloy: Thermal stability in a wide temperature range J. Appl. Phys. 113, 17A310 (2013); 10.1063/1.4794718Self-assembly of multiwalled carbon nanotubes from quench-condensed CNi 3 films Structure of electroless deposited Co 0.9 W 0.02 P 0.08 thin films and their evolution with thermal annealing Thin nanocrystalline hcp Co-based films are grown by chemical vapor deposition on SiO 2 . Tetrakis͑trimethylphosphine͒cobalt͑0͒, ͑͑CH 3 ͒ 3 P͒ 4 Co, is a single-source precursor that forms Co films that incorporate both P and C when the substrate temperature ranges from 225 to 325°C, and feature crystallites sized Ͻ15 nm. The P within the deposited film is mostly elemental with some being phosphidic, and the C exists mostly in the carbidic form along with some being graphitic. The Co is correspondingly predominantly metallic. Upon annealing to 400°C for 3 h, some extent of both Co 2 P crystallite precipitation and minimal allotropic transformation to fcc Co is observed, and the amount of carbidic C is reduced relative to graphitic C, but the nanocrystalline microstructure of the film is preserved, still primarily composed of hcp Co-based crystallites.

Self-Assembled Nano-Stuffing Structure in CVD and ALD Co(W) Films as a Single-Layered Barrier/Liner for Future Cu-Interconnects

“…11,12 Thus, a sidewall material is required in which the adhesion strength is not affected by impurities. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] The relationship between the adhesion strength and interfacial energy can be expressed by the Young-Dupre equation. The lower interfacial energy between two materials produces high adhesion strength.…”

“…The current goal is to find Co-based or Ru-based materials that can act as both a liner and a barrier in interconnects. Ru-based [21][22][23] and Co-based 24,25 alloys have been evaluated as alternative materials for a single-layer barrier/liner. Alloying produces an amorphous grain boundary 26,27 and/or stuffing of grain boundaries, 28,29 both of which improve the barrier properties of the film against Cu diffusion.…”

CVD and ALD Co(W) Films Using Amidinato Precursors as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

“…11,12 Therefore, for the sidewall, other materials, in which adhesion strength is not affected by impurities, must be developed. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] From the viewpoint of surface engineering, Young-Dupre's equation expresses the relationship between adhesion strength and interfacial energy. Lower interfacial energy between two materials produces high adhesion strength.…”

“…Co-based material or Ru-based material that acts as both a liner and a barrier is one of the current goals in material researches for future ULSIs. Ru-based alloys [21][22][23] and Co-based alloys 24,25 have been evaluated as alternative materials for the single-layered barrier/liner. Alloying causes amorphous 26,27 and/or stuffing of grain boundaries, 28,29 both of which improve the barrier property of a film against Cu diffusion.…”

Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

“…8) Therefore, for the sidewall, other materials, in which adhesion strength is not affected by impurities, must be developed. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] From the viewpoint of surface engineering, Young-Dupre's equation expresses the relationship between adhesion strength and interfacial energy. Lower interfacial energy between two materials produces high adhesion strength.…”