Nanocrystalline diamond growth in a surface-wave plasma

Tsugawa, Kazuo; Kawaki, Shyunsuke; Ishihara, Masatou; Kim, Jae-Ho; Koga, Yoshinori; Sakakita, Hajime; Koguchi, Haruhisa; Hasegawa, Masataka

doi:10.1016/j.diamond.2011.03.031

Cited by 57 publications

(74 citation statements)

References 43 publications

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“…In fact, the diamond film thickness is around 1.7 m for both of them. In addition, they exhibit similar adhesion strength values in the scratch adhesion test where normal loads of failure range from 5 to 6 N. This fact supports a model of diamond nucleation in the gas phase 24,25) using a surface-wave plasma, which enables the low-temperature growth of diamond still below 100 C. 24) The average crystallite sizes of diamond films on stainless steel have been estimated by using the X-ray diffraction patterns of the diamond films. A diffraction pattern is shown in Fig.…”

Section: Resultssupporting

confidence: 70%

“…The NCD film grows through continuous renucleations 24,25) with a constant rate per unit time per unit area 24) in the surface-wave plasma. This gives the NCD film a smooth surface with a small roughness independent of its thickness.…”

Section: Resultsmentioning

confidence: 99%

“…This gives the NCD film a smooth surface with a small roughness independent of its thickness. 21) The effective renucleation rate is determined by the substrate temperature under equal conditions of other growth parameters, 24) which define the average crystal size. Such growth regime is totally different from the columnar growth regime of the microcrystalline diamond film.…”

Section: Resultsmentioning

confidence: 99%

“…The details of the MWPCVD chamber are described elsewhere. 24,25) In the CVD process, a hydrogen-diluted CH 4 and CO 2 mixture was used as the reaction gas. The concentrations of the two carbon source gases (CH 4 and CO 2 ) were fixed at 5 vol.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…[21][22][23][24][25] It has realized a wide substrate temperature range for NCD growth from below 100 C to above 700 C. 24) Employing this technique, NCD films have been deposited on stainless steel substrates without those problems in the present work. Their mechanical properties have been characterized by friction and wear tests.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Direct Coating of Nanocrystalline Diamond on Steel

Tsugawa¹,

Kawaki²,

Ishihara³

et al. 2012

Jpn. J. Appl. Phys.

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Nanocrystalline diamond films have been successfully deposited on stainless steel substrates without any substrate pretreatments to promote diamond nucleation, including the formation of interlayers. A low-temperature growth technique, 400 C or lower, in microwave plasma chemical vapor deposition using a surface-wave plasma has cleared up problems in diamond growth on ferrous materials, such as the surface graphitization, long incubation time, substrate softening, and poor adhesion. The deposited nanocrystalline diamond films on stainless steel exhibit good adhesion and tribological properties, such as a high wear resistance, a low friction coefficient, and a low aggression strength, at room temperature in air without lubrication. #

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Section: Resultssupporting

confidence: 70%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Direct Coating of Nanocrystalline Diamond on Steel

Tsugawa¹,

Kawaki²,

Ishihara³

et al. 2012

Jpn. J. Appl. Phys.

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Nanocrystalline and microcrystalline diamond stacking structure as an insulating material deposited on large area

Yamada

Hasegawa

2013

Physica Status Solidi (a)

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Phone: þ81 29 861 3851, Fax: þ81 29 861 4522A stacking structure of nanocrystalline diamond (NCD) and microcrystalline diamond (MCD) was proposed to use as an insulating layer for silicon on insulator (SOI) substrates with large wafer size, in order to improve both break down field and thermal conductivity. NCD with a thickness of about 200 nm was deposited by the surface wave microwave plasma chemical vapor deposition (CVD) on silicon (Si) substrate after seeding process and then MCD (6 mm in thickness) was deposited on the as-grown NCD surface by hot filament CVD. It was confirmed, by scanning electron microscope observation, formation of the stacking structure of NCD and MCD. From measurements of current versus voltage characteristics, the break down field of the stacking structure was three times higher than that of MCD layer. Thermal conductivities of the self-standing of stacking structure measured by thermoreflectance measurement were from 320 to 500 W mK À1 , which was almost the same as the thermal conductivities of the MCD layers. Original Paper 2000T. Yamada and M. Hasegawa: nc and mc diamond stacking structure deposited on large area ß

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Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma‐enhanced chemical vapour deposition system

Taylor

Ashcheulov

Čada

et al. 2015

Physica Status Solidi (a)

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The addition of CO 2 into the process gas has a significant impact on the quality and the incorporation of boron in CVD diamond layers. In this report we study the effect of CO 2 addition in the gas phase on the properties of boron doped nano-crystalline diamond (BNCD) layers grown at low substrate temperatures (450-500 8C) using a microwave linear antenna plasma-enhanced chemical vapour deposition apparatus (MW-LA-PECVD). Experimental results show an increase in the layers' conductivity with a reduction in CO 2 concentration, which is consistent with the variation in the atomic boron emission line intensity measured by optical emission spectroscopy (OES). At CO 2 concentrations close to zero, we observed the formation of a smooth, transparent and highly resistive layer on unseeded substrates. This layer has been identified as silicon carbide (SiC) by transmission electron microscopy and X-ray photoelectron microscopy. The presence of silicon in the plasma is confirmed by OES and it is attributed to quartz tube etching. In this specific deposition condition, diamond growth is in competition with SiC growth, which affects the diamond layer properties.SEM image of layer growth on a silicon substrate at low CO 2 concentration on unseeded area (left) with a smooth, highly resistive and transparent SiC layer and seeded area (right) with a boron doped nano-crystalline diamond layer.

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Nanocrystalline diamond growth in a surface-wave plasma

Cited by 57 publications

References 43 publications

Direct Coating of Nanocrystalline Diamond on Steel

Direct Coating of Nanocrystalline Diamond on Steel

Nanocrystalline and microcrystalline diamond stacking structure as an insulating material deposited on large area

Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma‐enhanced chemical vapour deposition system

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