Nanocrystalline silicon formation in a SiH4 plasma cell

Otobe, Masanori; Kanai, Tomonori; Ifuku, Toru; Yajima, H.; Oda, Shunri

doi:10.1016/0022-3093(96)00161-5

Cited by 35 publications

(17 citation statements)

References 3 publications

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“…[101] Simulations with typical plasma operation conditions gave a factor of 10 3 drop in particle density in the first 0.1 s. [100] The silicon nanoparticles formed in SiH 4 plasmas could be both amorphous [96][97][98] and crystalline. [95,98,[111][112][113] Mangolini et al attributed the unexpected high crystallinity to the electron-ion recombination on the surface of small silicon nanoparticles. [95] Simulations using typical electron and ion densities, electron temperature, and recombination frequency showed that the heat released from the recombination of electrons and ions may cause the heating of small silicon nanoparticles.…”

Section: Particle Dispersion and Crystallinitymentioning

confidence: 97%

“…However, silicon nanocrystals as large as 100 nm could also be obtained, [112,114] which could not be explained by the above mechanism. Hydrogen [92,98,111,113] or argon [95,114,115] dilution is usually used for crystalline nanoparticle formation. It is well known that hydrogen causes the transition from amorphous silicon to microcrystalline silicon.…”

Section: Particle Dispersion and Crystallinitymentioning

confidence: 99%

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Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

et al. 2010

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Plasma is a unique medium for chemical reactions and materials preparations, which also finds its application in the current tide of nanostructure fabrication. Although plasma-assisted approaches have been long used in thin-film deposition and the top-down scheme of micro-/nanofabrication, fabrication of zero- and one-dimensional inorganic nanostructures through the bottom-up scheme is a relatively new focus of plasma application. In this article, recent plasma-assisted techniques in inorganic zero- and one-dimensional nanostructure fabrication are reviewed, which includes four categories of plasma-assisted approaches: plasma-enhanced chemical vapor deposition, thermal plasma sintering with liquid/solid feeding, thermal plasma evaporation and condensation, and plasma treatment of solids. The special effects and the advantages of plasmas on nanostructure fabrication are illustrated with examples, emphasizing on the understandings and ideas for controlling the growth, structure, and properties during plasma-assisted fabrications. This Review provides insight into the utilization of the special properties of plasmas in nanostructure fabrication.

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Section: Particle Dispersion and Crystallinitymentioning

confidence: 97%

Section: Particle Dispersion and Crystallinitymentioning

confidence: 99%

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

et al. 2010

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“…Details of the preparation and characterization of these nanocrystallite samples are given in Ref. [6] and [7]. The surface of the as-prepared Si nanocrystals was terminated by hydrogen atoms.…”

Section: Zero-dimensional Si Nanocrystalsmentioning

confidence: 99%

Photoluminescence Mechanism of Silicon Quantum Dots and Wells

Kanemitsu

Okamoto

1996

MRS Proc.

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We discuss the mechanism of efficient photoluminescence (PL) from Si quantum dots and wells. Luminescence properties of Si0 2 -capped Si nanocrystals are different from those of H-terminated Si nanocrystals, but are very similar to those of Si quantum wells sandwiched by Si0 2 layers. The size-dependence of PL properties and resonantly excited PL spectra of SiO 2 -capped Si dots and wells indicate that excitons are localized near the interface between the crystalline Si core and surface oxide layer, and the strong coupling of electronic and vibrational excitations causes the broad PL spectrum. The exciton localization plays an essential role in the efficient luminescence process in nanoscale Si/SiO 2 systems.

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“…The method of plasma stimulated chemical vapor deposition (PECVD) makes it possible to produce the films of amorphous silicon with high part of the crystalline phase (3) which determined its intensive investigation (3)(4)(5)(6)(7). It is low sensitive to selection of substrates and well compatible with standard silicon technologies.…”

mentioning

confidence: 99%

PECVD Deposition of nc-Si, μc-Si, and a-Si of Different Isotopic Composition in Form of Films and Bulk Material from SiF₄ Precursor

Сенников¹,

Golubev²,

Shashkin

et al. 2009

ECS Trans.

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The results on production of films and bulk silicon samples of different isotopic composition by PECVD method are reported. The samples are investigated by the methods of X-ray diffraction, Raman scattering, secondary-ion mass spectrometry, IR spectroscopy. The photoluminescence spectra are measured at room temperature. Depending upon experiment the phase composition of samples is represented by nano-, micro-crystalline and amorphous silicon.

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Nanocrystalline silicon formation in a SiH4 plasma cell

Cited by 35 publications

References 3 publications

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

Photoluminescence Mechanism of Silicon Quantum Dots and Wells

PECVD Deposition of nc-Si, μc-Si, and a-Si of Different Isotopic Composition in Form of Films and Bulk Material from SiF₄ Precursor

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Nanocrystalline silicon formation in a SiH4 plasma cell

Cited by 35 publications

References 3 publications

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

Photoluminescence Mechanism of Silicon Quantum Dots and Wells

PECVD Deposition of nc-Si, μc-Si, and a-Si of Different Isotopic Composition in Form of Films and Bulk Material from SiF4 Precursor

Contact Info

Product

Resources

About

PECVD Deposition of nc-Si, μc-Si, and a-Si of Different Isotopic Composition in Form of Films and Bulk Material from SiF₄ Precursor