Nanocrystalline thin films of CuInS2 grown by spray pyrolysis

Sharma, Ashok; Rajaram, P.

doi:10.1016/j.mseb.2010.04.012

Cited by 22 publications

(7 citation statements)

References 32 publications

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“…the amount of TU used in the precursor solution. The band gap values are consistent with the literature 15,21,45. …”

supporting

confidence: 92%

“…From the economic point of view chemical deposition methods, especially spray pyrolysis processes, offer an attractive solution to this problem, as large area thin films can easily be prepared. The majority of these chemical deposition methods use thiourea (TU) as sulfur source and none-coordinating or only weak coordinating solvents like H 2 O to dissolve the metal salt precursors. − Efficiencies of 9.5% were already achieved for an all sprayed CuInS 2 /In 2 S 3 -solar cell, however, temperatures of 300 °C have to be applied to form the ternary semiconductor. ,,− A lowering of the temperature for the preparation of the solar absorber layer to about 150 – 200 °C would open the possibility to produce solar cell layers on cheap and flexible polymer substrates (e.g., PET, PEN), which would pave the way for a fast and cost-effective roll to roll solar cell fabrication similar to polymer-based solar cells. , Detailed studies of the thermal behavior of metal-thiourea complexes prepared from aqueous solutions revealed that the corresponding metal sulfides (CuInS 2 , CuS, and ZnS) were only formed at temperatures above 200 °C, , which corresponds to the decomposition temperature of thiourea (approximately 190 °C) …”

Section: Introductionmentioning

confidence: 99%

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Investigation of CuInS₂ Thin Film Formation by a Low-Temperature Chemical Deposition Method

Fischereder

Rath

Haas

et al. 2011

ACS Appl. Mater. Interfaces

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Copper indium disulfide (CuInS(2), CIS) thin films were prepared by an alternative solution-based coating process adapted from the well-established aqueous metal salt/thiourea precursor system. The temperature for the decomposition of the precursors and the formation of CIS was lowered significantly to 130 °C by using the strongly coordinating solvent pyridine instead of the commonly used water. In addition, the influence of different annealing temperatures and concentrations of thiourea (TU) in the precursor solution on the obtained CIS samples was investigated. The films possess highly beneficial properties for photovoltaic applications, showing a chalcopyrite crystal structure, a high optical absorption (>10(4) cm(-1)) and an optical band gap between 1.45 and 1.51 eV. Chemical and morphological changes during the thin film formation were detected and explained by time-resolved simultaneous grazing incident small- and wide-angle X-ray scattering (GISAXS, GIWAXS) measurements, scanning electron microsccopy (SEM) and simultaneous thermogravimetry/mass spectroscopy (TG/MS).

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“…the amount of TU used in the precursor solution. The band gap values are consistent with the literature 15,21,45. …”

supporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Investigation of CuInS₂ Thin Film Formation by a Low-Temperature Chemical Deposition Method

Fischereder

Rath

Haas

et al. 2011

ACS Appl. Mater. Interfaces

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“…Numerous papers have also been devoted to the investigation of the physical and chemical properties of CuInS 2 . However, when it comes to CuInS 2 NCs, or, in general, low-dimensional CuInS 2 of either zinc blende (cubic) or wurtzite (hexagonal) structural type, the number of studies becomes rather limited. ,− ,− According to the literature data, these films have generally been prepared by conventional growth methods such as sputtering, evaporation, and chemical vapor deposition, while synthetic routes to nanocrystals have often been realized under harsh conditions (such as high vacuum and high temperature). This increases the cost of synthesis processes, and at the same time, they are hardly scaled up to produce large amounts of the material on an industrial scale.…”

Section: Introductionmentioning

confidence: 99%

Sonochemically Synthesized Quantum Nanocrystals of Cubic CuInS₂: Evidence for Multifractal Surface Morphology, Size-Dependent Structure, and Particle Size Distribution

2020

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Advanced techniques for analysis of XRD patterns and optical absorption spectra were employed to derive in-depth physical insights into the structure and properties of quantum nanocrystals of the cubic modification of CuInS 2 synthesized by a sonochemical route. Three-dimensional assemblies of the synthesized nanocrystals deposited as thin films exhibit multifractal surface morphology, with the multifractal singularity spectral widths being far above the monofractal limit. The widths of the multifractal spectra indicate that films grown by the conventional chemical method are structurally richer and at the same time characterized by higher complexity of the surface than those grown under sonochemical conditions, while the values of the Holder exponent corresponding to their maxima are rather close. In both cases, the multifractal spectra are right-skewed, with a positive asymmetry parameter a s and domination of high fractal exponents. The right-skewness is more pronounced in the case of sonochemically deposited films. Lacunarity in the chemically deposited samples is smaller than in the sonochemically deposited ones, regardless of the particular scale on which the comparison is carried out, indicating a higher homogeneity and, in parallel, higher translational invariance in the former case. Somewhat larger heterogeneity and wider distribution of gap sizes in the sonochemically deposited samples are attributed to acoustic streaming phenomena that take place within the ultrasonically irradiated reactor under heterogeneous sonochemical conditions. The average particle size as well as the size distribution and the degree of structural disorder can be controlled by an appropriate control of the reactor content and its exposure to ultrasonic irradiation in the course of deposition process. This, in turn, allows appropriate tuning of the material's band gap energy, which is physically based on both intradot size-quantization effects and the interdot charge carrier coupling phenomena. Considering the substantial relevance of the title material in optoelectronics and solar cell technology, the physically based design of the material's properties demonstrated in the present study can open certain new directions in the development of solar cells based on inorganic semiconductor systems.

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“…The method of spray pyrolysis uses precursor solutions that are sprayed onto a heated substrate, usually in the range of 200-500 C. With this general procedure various materials (including ZnO, TiO 2 , SnO 2 , CuInS 2 , CdSe or Al 2 O 3 ) can be processed into thin films with corresponding precursors. [20][21][22][23][24][25][26][27] A broad field of applications like TFTs, solar cells or phosphors could already be demonstrated by applying this technique.…”

mentioning

confidence: 99%

Morphological impact of zinc oxide layers on the device performance in thin-film transistors

Faber

Klaumünzer²,

Voigt³

et al. 2011

Nanoscale

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Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

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Nanocrystalline thin films of CuInS2 grown by spray pyrolysis

Cited by 22 publications

References 32 publications

Investigation of CuInS₂ Thin Film Formation by a Low-Temperature Chemical Deposition Method

Investigation of CuInS₂ Thin Film Formation by a Low-Temperature Chemical Deposition Method

Sonochemically Synthesized Quantum Nanocrystals of Cubic CuInS₂: Evidence for Multifractal Surface Morphology, Size-Dependent Structure, and Particle Size Distribution

Morphological impact of zinc oxide layers on the device performance in thin-film transistors

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Nanocrystalline thin films of CuInS2 grown by spray pyrolysis

Cited by 22 publications

References 32 publications

Investigation of CuInS2 Thin Film Formation by a Low-Temperature Chemical Deposition Method

Investigation of CuInS2 Thin Film Formation by a Low-Temperature Chemical Deposition Method

Sonochemically Synthesized Quantum Nanocrystals of Cubic CuInS2: Evidence for Multifractal Surface Morphology, Size-Dependent Structure, and Particle Size Distribution

Morphological impact of zinc oxide layers on the device performance in thin-film transistors

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Product

Resources

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Investigation of CuInS₂ Thin Film Formation by a Low-Temperature Chemical Deposition Method

Investigation of CuInS₂ Thin Film Formation by a Low-Temperature Chemical Deposition Method

Sonochemically Synthesized Quantum Nanocrystals of Cubic CuInS₂: Evidence for Multifractal Surface Morphology, Size-Dependent Structure, and Particle Size Distribution