Nanocrystallites formation in a‐SiC by low power plasma enhanced chemical vapour deposition

Bhaduri, Ayana; Kole, Arindam; Chaudhuri, Phalguni

doi:10.1002/pssc.200982837

Cited by 5 publications

(2 citation statements)

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“…14,15,21 In this study, the lc-SiC:H multilayer samples designated by #SiC-MLx where x denotes the sample number were deposited in a rf (13.56 MHz) PECVD system from a mixture of SiH 4 and CH 4 in 1:1 ratio diluted by 98.4 vol. % of Ar at a temperature of 200 C and pressure of 26.6 P. The successive lc-SiC:H layers were prepared by toggling the rf power level between 80 mW/cm 3 for high power layer (HPL) and 40 mW/cm 3 for the low power layer (LPL).…”

Section: A Preparation Of #Sic-ml Multilayersmentioning

confidence: 99%

Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

Chaudhuri

Kole

Haider

2013

Journal of Applied Physics

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We have systematically studied a series of silicon carbide multilayer (#SiC) samples, each consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (lc-SiC:H) having identical band gap of 2.2 eV but different amount of crystalline silicon volume fraction. The thickness of the lc-SiC:H layer deposited at higher power (termed as HPL) with higher degree of crystallinity was kept fixed at a value of 5 nm, while the thickness of the other lc-SiC:H layer deposited at a lower power (termed as LPL) was changed from 13 nm to 2 nm for the different samples of the series. With lowering of the LPL thickness, a decrease in the void fraction together with an improvement in the short range order within the multilayered samples was observed. By decreasing the thickness of the LPL layer up to 2 nm, the photoluminescence study indicates the formation of an intermediate band within the superlattice of lc-SiC:H. Photovoltaic properties of this superlattice layer were investigated in a p-i-n diode structure. V C 2013 American Institute of Physics. [http://dx.

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Section: A Preparation Of #Sic-ml Multilayersmentioning

confidence: 99%

Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

Chaudhuri

Kole

Haider

2013

Journal of Applied Physics

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“…2,7,8 Formation of nc-Si within SiC matrix may be achieved by controlling the deposition parameters in a conventional rf (13.56 MHz) plasma enhanced chemical vapour deposition (PECVD) system. [9][10][11][12][13] There are also thermal methods of growth of nc-Si within amorphous silicon carbide films. Solid phase crystallization (SPC) method for nc-Si growth requires a temperature of 1100 • C. 14,15 By Al induced crystallization (AIC) method the growth of grains of nc-Si has been achieved at a much lower temperature than above in a-Si layers.…”

Section: Introductionmentioning

confidence: 99%

Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

Kole

Chaudhuri

2014

AIP Advances

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Articles you may be interested inPhotoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Effect of thickness on the photoluminescence of silicon quantum dots embedded in silicon nitride films Low-temperature synthesis of homogeneous nanocrystalline cubic silicon carbide films J. Appl. Phys. 102, 056101 (2007); 10.1063/1.2776155 H-induced effects in luminescent silicon nanostructures obtained from plasma enhanced chemical vapor deposition grown Si y O 1 − y : H ( y > 1 ∕ 3 ) thin films annealed in ( Ar + 5 % H 2 )A moderately low temperature (≤800 • C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (µc-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T v = 525 • C. The samples were then stepwise annealed at different temperatures T a in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the µc-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D XRD ) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T a from 250 • C to 800 • C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV. C 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Evolution of structural and optical properties of nanostructured silicon carbon films deposited by plasma enhanced chemical vapour deposition

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Nanocrystallites formation in a‐SiC by low power plasma enhanced chemical vapour deposition

Cited by 5 publications

References 16 publications

Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

Evolution of structural and optical properties of nanostructured silicon carbon films deposited by plasma enhanced chemical vapour deposition

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