Nanocrystals of PbSe core, PbSe/PbS, and PbSe/PbSe_xS_1-x core/shell as saturable absorbers in passively Q-switched near-infrared lasers

PbSe/CdSe Thin-Shell Colloidal Quantum Dots

“…Other unique properties of IV-VI nanostructures are small effective masses [7] of electrons and holes, large dielectric constants [8], and a relatively large effective exciton Bohr radius [4]. The above properties make IV-VI CQDs indispensable in such emerging applications as CQD gain devices [9,10], biological markers [11][12][13], photovoltaic cells (PVCs) [14][15][16][17][18][19][20], Q-switches [21,22], and thermoelectric devices [23][24][25]. For example, due to their broad-band absorption profile, light harvesting in IV-VI CQD-based PVCs is extremely large, resulting in power conversion efficiency of up to 8% [14][15][16][17][18][19][20].…”

Morphology‐Tailored Synthesis of PbSe Nanocrystals and Thin Films from Bis[N,N‐diisobutyl‐N′‐(4‐nitrobenzoyl)selenoureato]lead(II)

“…[1] Strong confinement of the electron-hole pair results in a large optical nonlinearity. [2] Lead selenide particles or thin films with critical dimensions best measured in nanometres have potential for application in optical switches, [2][3][4] communication devices, [5][6][7][8][9] photovoltaic cells, [10][11][12][13][14][15][16][17][18][19][20][21][22] biological imaging [23][24][25][26][27][28] and photodetectors. [29][30][31][32][33][34][35][36] Murray et al first synthesized monodispersed PbSe quantum dots, [37] but a number of other strategies have now been developed.…”

Optical properties of type-I PbSe/CdSe core/shell quantum dot

“…The linear intersubband optical transition energies are brought out. The nonlinear optical absorption coefficients and the changes of refractive index 11 with the photon energy are carried out numerically. The material parameters followed in the present work are given in Table.1.…”

“…These materials show strong nonlinear optical properties displaying higher refractive index (nearly six orders) than the conventional Si and GaAs materials. Hence, they can be used for all optical signal processing systems [10,11]. The other important material parameters are lattice constants, mobilities, carrier concentrations, composition with the inner and outer materials in a heterostructure, band offsets, temperature dependent band gap, energy dependent effective masses, larger dielectric constants and energy-dependent refractive indices.…”