Nanofloating gate modulated synaptic organic light-emitting transistors for reconfigurable displays

Abstract

The use of postsynaptic current to drive long-lasting luminescence holds a disruptive potential for harnessing the next-generation of smart displays. Multiresponsive long afterglow emission can be achieved by integrating light-emitting polymers in electric spiked transistors trigged by distinct presynaptic signals inputs. Here, we report a highly effective electric spiked long afterglow organic light-emitting transistor (LAOLET), whose operation relies on a nanofloating gate architecture. Long afterglow emission with reconfigurable brightness and retention time is observed upon applying specific positive gate voltage spiked. Conversely, when negative gate voltage stimulus is applied, these LAOLETs function as click-on display. Interestingly, upon endowing the device with force sensing capabilities, it can operate as a long afterglow pressure sensor that emits long-lasting green light subsequently to a controlled extrusion action.

Optogenetics-Inspired Fluorescent Synaptic Devices with Nonvolatility

“…Figure c shows the fluorescence mapping of a Si QDs/MoS 2 synaptic device, indicating that the fluorescence may facilitate device visualization. Compared with previous synaptic devices with light emission enabled by light-emitting diode (LED) − or light-emitting transistor (LET) structures, , the Si QDs/MoS 2 synaptic device has a simple structure without hole/electron transport layers. Moreover, instead of being triggered by the electrical inputs, the optically stimulated synaptic plasticity and synchronous fluorescence render advantages such as wide bandwidth, negligible RC (R = resistance, C = capacitance) delay and power loss, and global regulation of multiple synaptic devices …”

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction

“…The fact that bipolar devices have two types of carriers flowing simultaneously within the body of the device, in the form of two‐ or three‐terminal configuration, provides us versatile strategies to design and construct novel device architectures with desirable functionalities by simply controlling the flow of either one type of the carriers or both together. Bipolar junction transistors or ambipolar field‐effect transistors, [ 1–3 ] the classic three‐terminal bipolar devices laying the foundation of earlier logic integrated circuits in microprocessors, can switch between different operation modes simply by regulating carrier transport behavior in channel via applied voltage on gate electrode. And both electrons and holes can be injected at separate electrodes.…”

A dπ‐pπ Conjugated System with High Mobility and Strong Emission Simultaneously

“…[ 1–4 ] The development of organic π‐conjugated materials with concomitant semiconducting and light‐emissive properties is crucial for the design of multifunctional devices and the birth of new technologies. [ 5–10 ] However, combining such dual functions in one π‐system remains challenging. The strong π–π stacking interactions of π‐functional materials are usually beneficial to enhance charge transport, but quench emission because of the aggregation‐caused quenching (ACQ) effect.…”

“…[1][2][3][4] The development of organic π-conjugated materials with concomitant semiconducting and light-emissive properties is crucial for the design of multifunctional devices and the birth of new technologies. [5][6][7][8][9][10] However, combining such dual functions in one π-system remains challenging. The strong π-π stacking interactions of π-functional materials are usually ben-As shown in Figure 2a, treatment of osmapentalynes (also termed carbolong complexes) such as S1 and S2 with PDI acetylide (PDI-1a and PDI-1b) in the presence of acid [34] produces the PDI-based carbolong complexes 1a, 1b, and 1c.…”