2017
DOI: 10.15407/spqeo20.03.344
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Nanograin boundaries and silicon carbide photoluminescence

Abstract: Abstract. The luminescence spectra of SiC crystals and films with grain boundaries (GB) on the atomic level were observed. The GB spectra are associated with luminescence centers localized in areas of specific structural abnormalities in the crystal, without no reference to the one-dimensional layer-disordering. The zero-phonon part of GB spectra is always within the same energy range (2.890…2.945 eV) and does not fit in the dependence of its position in the energy scale on the percent of hexagonality as in th… Show more

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Cited by 2 publications
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“…As the urgency of energy conversation and the development of optoeletronics device, single crystal substrates such as sapphire and SiC have attracted more and more attention [1][2][3][4]. As we known, sapphire is the most common substrate for light emitting diode (LED), due to the excellent crystalline growth technology.…”
Section: Introductionmentioning
confidence: 99%
“…As the urgency of energy conversation and the development of optoeletronics device, single crystal substrates such as sapphire and SiC have attracted more and more attention [1][2][3][4]. As we known, sapphire is the most common substrate for light emitting diode (LED), due to the excellent crystalline growth technology.…”
Section: Introductionmentioning
confidence: 99%