Nanoimprint Molds with Circumferentially Aligned Patterns Fabricated by Liftoff Process

Okada, Takeru; Fujimori, Jiro; Iida, Takuya

doi:10.1143/jjap.50.126502

Cited by 4 publications

(2 citation statements)

References 36 publications

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“…For BPM fabrication, nanoimprint technology is widely thought to be a promising solution because of its high throughput. [4][5][6][7][8][9][10][11] However, application of this technology requires the fabrication technique of a nanometer-sized dot pattern used as a mold for nanoimprint. For the fabrication of a nanodot pattern mold, there are some candidate methods, such as electron beam (EB) lithography [12][13][14][15] and self-assembly using a block co-polymer (BCP).…”

Section: Introductionmentioning

confidence: 99%

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Komori

Zhang

Akahane

et al. 2012

Jpn. J. Appl. Phys.

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We investigated the effects of developer and hydrogen silsesquioxane (HSQ) resist thickness in the formation of dot arrays with a pitch of <18×18 nm2 by using 30-keV electron beam (EB) lithography for bit patterned media (BPM). Optimum resist thickness and developer were investigated for the formation of fine dot arrays. We found that a 12-nm-thick HSQ resist was suitable to form fine dot patterns and the addition of NaCl into tetramethylammonium hydroxide (TMAH) could improve the development contrast (γ-value) of HSQ (the highest is 9.7). By using the 12-nm-thick HSQ resist film and 2.3 wt % TMAH/4 wt % NaCl developer, we successfully fabricated very fine resist dot arrays with a dot size of <10 nm and a pitch of 15×15 nm2, which corresponds to a storage density of about 3 Tbit/in.2 in BPM.

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Section: Introductionmentioning

confidence: 99%

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Komori

Zhang

Akahane

et al. 2012

Jpn. J. Appl. Phys.

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“…Then, the resist pattern has the normal taper, but it is unsuitable for the lift-off process. Several processes have been proposed for successful lift-off for NIL resist patterns [16].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Nickel Plasma Etching Mask by Nano-Imprint Lithography and Electroless Plating

Shimizu

Tanabe

Yasuda

et al. 2020

J. Photopol. Sci. Technol.

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Fine nickel (Ni) patterns were fabricated using the electroless plating. Poly(methyl methacrylate) (PMMA) patterns fabricated by the thermal nanoimprint lithography were used for the Ni pattern fabrication. Two processes, which were the "reverse pattern process" and the "same pattern process", were developed. By the "reverse pattern process", Ni pattern with the reverse to the PMMA pattern could be obtained. By the "same pattern process", the same Ni pattern as the PMMA pattern could be obtained. Only by a slight process change, two different Ni patterns could be obtained from the same PMMA pattern. Silicon patterns were fabricated by plasma etching using the fabricated Ni patterns as an etching mask. By the "reverse pattern process", good Si line and space pattern with about 0.2 μm width was successfully fabricated. By the "same pattern process", a Si line and space pattern with about 0.2 μm width was also obtained, but its line edge roughness was large.

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Sub-10-nm Size and Sub-40-nm Pitch Metal Dot Patterning for Low-Cost Bit Patterned Media Application

Tobing

Tjahjana

Zhang

2014

IEEE Trans. Nanotechnology

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Nanoimprint Molds with Circumferentially Aligned Patterns Fabricated by Liftoff Process

Cited by 4 publications

References 36 publications

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Fabrication of Nickel Plasma Etching Mask by Nano-Imprint Lithography and Electroless Plating

Sub-10-nm Size and Sub-40-nm Pitch Metal Dot Patterning for Low-Cost Bit Patterned Media Application

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Nanoimprint Molds with Circumferentially Aligned Patterns Fabricated by Liftoff Process

Cited by 4 publications

References 36 publications

Electron Beam Lithography of 15×15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Electron Beam Lithography of 15×15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Fabrication of Nickel Plasma Etching Mask by Nano-Imprint Lithography and Electroless Plating

Sub-10-nm Size and Sub-40-nm Pitch Metal Dot Patterning for Low-Cost Bit Patterned Media Application

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Product

Resources

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Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer