Nanoimprint system alignment and overlay improvement for high volume semiconductor manufacturing

Kimura, Atsushi; Takabayashi, Yukio; Iwanaga, Takehiko; Hiura, Mitsuru; Sakai, Keita; Morohoshi, Hiroshi; Asano, Toshiki; Hayashi, Toshio; Komaki, Takamitsu

doi:10.1117/12.2551985

Cited by 5 publications

(4 citation statements)

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“…2(c)], NIL patterning was performed using a NIL stepper (FPA-1200NZ2C, Canon) developed for semiconductor manufacturing. [23][24][25] The residual layer thickness and the pattern height of the NIL resist were 20 nm and 100 nm, respectively. The removal etching of the NIL residual layer was performed using a plasma etching system (Telius SCCM, Tokyo Electron).…”

Section: Methodsmentioning

confidence: 99%

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Suzuki,

Youn,

Ueda

et al. 2024

Jpn. J. Appl. Phys.

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Nanoimprint lithography (NIL) is promising for processing of dual damascene structures fabricated in back-end-of-line layers and initial development began with a simple single-level process to evaluate NIL’s suitability. In this work, test element group (TEG) pattern with a 70 nm half-pitch was selected, and copper filling and chemical-mechanical polishing were performed after NIL pattern transfer. The results were compared with those obtained from the same TEG layout and processes except using ArF immersion lithography instead of NIL. Those obtained by NIL showed high pattern fidelity for all designed layouts, whereas the resist patterns varied from the designed shape for ArF immersion lithography. The line resistances of Cu interconnects patterned by NIL showed good cumulative distributions at linewidths ranging from 60 nm to 78 nm in 2 nm increments without line breaks or space narrowing of SiO2. NIL showed potential for interconnect patterning with high-precision linewidth control.

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Section: Methodsmentioning

confidence: 99%

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Suzuki,

Youn,

Ueda

et al. 2024

Jpn. J. Appl. Phys.

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show abstract

“…In the lithography step [Fig. 2(b)], NIL patterning was performed using a NIL stepper (FPA-1200NZ2C, Canon) that was developed for semiconductor manufacturing applications [17][18][19] . The residual layer thickness and the pattern height of the NIL resist were 18 nm and 48 nm, respectively.…”

Section: Fabrication Processmentioning

confidence: 99%

Open/short-TEG evaluation of 24nm-half-pitch-W damascene interconnects based on nanoimprint lithography

Suzuki,

Ueda,

Hiroshima

et al. 2024

Novel Patterning Technologies 2024

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Nanoimprint lithography (NIL) is regarded as a promising technique for application to fabrication of the dual damascene structures that are commonly fabricated in back-end-of-line layers. Initial development work has commenced with a simple single-level process to evaluate the suitability of NIL for back-end processing applications. In this work, a test pattern with a minimum half-pitch of 24 nm was patterned using NIL, and W damascene interconnects were then fabricated via a combination of W deposition followed by chemical mechanical polishing. The electrical performances of the test devices were subsequently evaluated using the open/short test element group. The line resistances and leakage currents of the W interconnect structures fabricated using NIL showed good cumulative distributions at the designed minimum linewidth of 24 nm. We also demonstrated that a diagonal zigzag capacitor pattern with a pattern size of 2X nm showed good electrical properties.

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“…Although this special layer sequence only serves demonstrational purposes it shows the potential of preparing several nanoimprinted layers on top of each other. For nanoimprinting of optical components alignment in the range of 100nm has been shown [23][24][25] . For the sample in Figure 1 the high index material was just droplet dispensed, with the hexagon-shape developing due to the underlying micropattern, which consisted of a hexagonal array of pillars.…”

Section: Thermalmentioning

confidence: 99%

Direct patterning of functional materials using nanoimprint lithography

Haslinger,

Kopp,

Jonaityte

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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Nanoimprint system alignment and overlay improvement for high volume semiconductor manufacturing

Cited by 5 publications

References 0 publications

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Open/short-TEG evaluation of 24nm-half-pitch-W damascene interconnects based on nanoimprint lithography

Direct patterning of functional materials using nanoimprint lithography

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