Nanoimprint System for High Volume Semiconductor Manufacturing; Requirement for Resist Materials

Ito, Tsugutaka; Emoto, Keiji; Takashima, Tsuneo; Sakai, Keita; Liu, Weijun; DeYoung, James; Ye, Zhengmao; LaBrake, Dwayne

doi:10.2494/photopolymer.29.159

Cited by 10 publications

(7 citation statements)

References 22 publications

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“…In the past decades, the progress in the performance of electronic devices and their functionality commenced with the continuous decreasing of device size, such as transistors, due to the advancements in lithography. − Further downscaling of the device size has thus been enhanced by next-generation lithography techniques such as electron beam lithography (EBL), helium ion beam lithography (HIBL), direct self-assembly, and extreme ultraviolet lithography among others. Apart from novel lithographic techniques to achieve the required resolution, novel new resist materials and process integration are required to address the current patterning challenges, arising with new technology nodes. , Even though, it is perceived that compatible resist technology differs entirely from the subsequent progress of the node, more particularly with regard to the stochastics of line edge/width roughness (LER/LWR), resolution, and sensitivity trade-off .…”

Section: Introductionmentioning

confidence: 99%

Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography

Kumar

Chauhan

Moinuddin

et al. 2020

ACS Appl. Mater. Interfaces

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Hybrid metal−organic cluster resist materials, also termed as organo-inorganics, demonstrate their potential for use in next-generation lithography owing to their ability for patterning down to ∼10 nm or below. High-resolution resist patterning is integrally associated with the compatibility of the resist and irradiation of the exposure source. Helium ion beam lithography (HIBL) is an emerging approach for the realization of sub-10 nm patterns at considerably lower line edge/width roughness (LER/ LWR) and higher sensitivity as compared to electron beam lithography (EBL). Here, for the first time, a negative tone resist incorporating nickel (Ni)-based metal−organic clusters (Ni-MOCs) was synthesized and patterned using HIBL and EBL at 30 keV. This resist comprises a nickel-based metal building unit covalently linked with the organic ligand: m-toluic acid (C 8 H 8 O 2 ). Dynamic light scattering confirmed a narrow size distribution of ∼2 nm for metal−organic cluster (MOC) formulations. High-resolution ∼9 nm HIBL line patterns were well developed at a sensitivity of 22 μC/cm 2 and at a significantly low LER and LWR of 1.81 ± 0.06 and 2.90 ± 0.06 nm, respectively. Analogous highresolution patterns were also observed in EBL with a sensitivity of 473 μC/cm 2 . Hence, the Ni-MOC-based resist investigated using HIBL and EBL elucidates the ability of its potential for the sub-10 nm technology node, under standard processing conditions.

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Section: Introductionmentioning

confidence: 99%

Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography

Kumar

Chauhan

Moinuddin

et al. 2020

ACS Appl. Mater. Interfaces

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“…2(c)], NIL patterning was performed using a NIL stepper (FPA-1200NZ2C, Canon) developed for semiconductor manufacturing. [23][24][25] The residual layer thickness and the pattern height of the NIL resist were 20 nm and 100 nm, respectively. The removal etching of the NIL residual layer was performed using a plasma etching system (Telius SCCM, Tokyo Electron).…”

Section: Methodsmentioning

confidence: 99%

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Suzuki,

Youn,

Ueda

et al. 2024

Jpn. J. Appl. Phys.

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Nanoimprint lithography (NIL) is promising for processing of dual damascene structures fabricated in back-end-of-line layers and initial development began with a simple single-level process to evaluate NIL’s suitability. In this work, test element group (TEG) pattern with a 70 nm half-pitch was selected, and copper filling and chemical-mechanical polishing were performed after NIL pattern transfer. The results were compared with those obtained from the same TEG layout and processes except using ArF immersion lithography instead of NIL. Those obtained by NIL showed high pattern fidelity for all designed layouts, whereas the resist patterns varied from the designed shape for ArF immersion lithography. The line resistances of Cu interconnects patterned by NIL showed good cumulative distributions at linewidths ranging from 60 nm to 78 nm in 2 nm increments without line breaks or space narrowing of SiO2. NIL showed potential for interconnect patterning with high-precision linewidth control.

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“…In the lithography step [Fig. 2(b)], NIL patterning was performed using a NIL stepper (FPA-1200NZ2C, Canon) that was developed for semiconductor manufacturing applications [17][18][19] . The residual layer thickness and the pattern height of the NIL resist were 18 nm and 48 nm, respectively.…”

Section: Fabrication Processmentioning

confidence: 99%

Open/short-TEG evaluation of 24nm-half-pitch-W damascene interconnects based on nanoimprint lithography

Suzuki,

Ueda,

Hiroshima

et al. 2024

Novel Patterning Technologies 2024

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Nanoimprint lithography (NIL) is regarded as a promising technique for application to fabrication of the dual damascene structures that are commonly fabricated in back-end-of-line layers. Initial development work has commenced with a simple single-level process to evaluate the suitability of NIL for back-end processing applications. In this work, a test pattern with a minimum half-pitch of 24 nm was patterned using NIL, and W damascene interconnects were then fabricated via a combination of W deposition followed by chemical mechanical polishing. The electrical performances of the test devices were subsequently evaluated using the open/short test element group. The line resistances and leakage currents of the W interconnect structures fabricated using NIL showed good cumulative distributions at the designed minimum linewidth of 24 nm. We also demonstrated that a diagonal zigzag capacitor pattern with a pattern size of 2X nm showed good electrical properties.

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Nanoimprint System for High Volume Semiconductor Manufacturing; Requirement for Resist Materials

Cited by 10 publications

References 22 publications

Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography

Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography

Electrical evaluation of copper damascene interconnects based on nanoimprint lithography compared with ArF immersion lithography for back-end-of-line process

Open/short-TEG evaluation of 24nm-half-pitch-W damascene interconnects based on nanoimprint lithography

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