Nanomechanical and microwave dielectric properties of SrBi4Ti4O15 thin films sputtered on amorphous substrates by rf sputtering

Rambabu, A.; Bashaiah, S.; Raju, K. C. James

doi:10.1007/s10854-014-1705-9

Cited by 7 publications

(1 citation statement)

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“…Split post dielectric resonator measurement technique is a highly accurate technique for the measurement of complex permittivity of dielectric substrates and thin films at spot frequencies in the range of 1–20 GHz . This method is attractive for accurate non ‐ destructive measurements of low ‐ loss substrates.…”

Section: Introductionmentioning

confidence: 99%

Optical and Microwave Dielectric Properties of Phase Pure (K_0.5Na_0.5)NbO₃ Thin Films Deposited by RF Magnetron Sputtering

et al. 2015

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K 0.5 Na 0.5 )NbO 3 (KNN) thin films have been deposited onto Pt/Ti/SiO 2 /Si and quartz substrates by RF magnetron sputtering. The films were deposited at 400°C with the variation in oxygen mixing percentage (OMP) ratio from 0% to 100% and annealed at 700°C in oxygen atmosphere. The crystallinity of the films is found to be increased with increased OMP. Dielectric properties of the films were examined over the frequency range from 1 kHz to 1 MHz and the temperature range of 30°C to 400°C. The Curie temperature of the films was found to be in the range 369°C-373°C. For the first time, the split postdielectric resonator (SPDR) method was used to measure the microwave (10-20 GHz) dielectric properties of KNN thin films. The optical properties of as-deposited and annealed KNN thin films were investigated by means of transmittance spectra. The optical bandgap is calculated by using the Tauc relation, and found to be in the range 4.34-4.40 eV and 4.29-4.37 eV for the as-deposited and annealed films, respectively. The refractive index (n 700nm ) of the films found to be in the range 1.98-2.01 and 1.99-2.07 for as-deposited and annealed films, respectively. The refractive index dispersion is analyzed by using Wemple-DiDomenico (W-D) single-oscillator model. The effect of annealing and OMP on the refractive index, packing density and W-D parameters has been investigated. The average single oscillator energy (E o ) and dispersion energies (E d ) of the annealed KNN thin films are in the range of 6.17-7.16 eV and 18.77-22.19 eV, respectively. AC-conductivity of the annealed films was analyzed by using double power law. Ag/KNN/Pt thin films followed the ohmic conduction (J / E a , where a~1) and the low leakage current density obtained for the deposited at 100% O 2 is 3.14 3 10 -5 A/cm 2 at 50 kV/cm. J. Jones-contributing editor Manuscript No. 35693.

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Section: Introductionmentioning

confidence: 99%

Optical and Microwave Dielectric Properties of Phase Pure (K_0.5Na_0.5)NbO₃ Thin Films Deposited by RF Magnetron Sputtering

et al. 2015

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Investigation of surface scaling, optical and microwave dielectric studies of Bi0.5Na0.5TiO3 thin films

Pattipaka

Pamu

Goud

et al. 2021

J Mater Sci: Mater Electron

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Herein, we have investigated the optical and microwave dielectric properties of Bi0.5Na0.5TiO3 (BNT) thin films grown under different oxygen pressure (PO2) using pulsed laser deposition (PLD) technique. The X-ray diffraction measurements confirms the single phase of BNT along with secondary phase and further reduction in secondary phase and increase in BNT phase with PO2, signifies the close relation between the crystal structure and oxygen content.The shift of Raman-active TO1, TO2 and TO3 modes towards higher wavelengths and increase in mode intensity with PO2 indicating the films degree of crystallinity. The local roughness (αloc) of all films obtained as  0.85, and the interface width () and lateral correlation length (ξ) of films varies with PO2. Also, the films exhibit the increase in refractive index and reduction in optical bandgap of due to improvement in crystallinity and reduction in the oxygen vacancies. The microwave dielectric properties show a strong PO2 depends with higher dielectric constant (εr = 336) with lower loss (tanδ = 0.0093) at 5 GHz which show the potential applications in high frequency devices.

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Tailoring the optical properties of SrBi4Ti4O15 thin films by RF sputtering process parameters

Rambabu¹,

Raju

2021

Materials Today: Proceedings

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Nanomechanical and microwave dielectric properties of SrBi4Ti4O15 thin films sputtered on amorphous substrates by rf sputtering

Cited by 7 publications

References 20 publications

Optical and Microwave Dielectric Properties of Phase Pure (K_0.5Na_0.5)NbO₃ Thin Films Deposited by RF Magnetron Sputtering

Optical and Microwave Dielectric Properties of Phase Pure (K_0.5Na_0.5)NbO₃ Thin Films Deposited by RF Magnetron Sputtering

Investigation of surface scaling, optical and microwave dielectric studies of Bi0.5Na0.5TiO3 thin films

Tailoring the optical properties of SrBi4Ti4O15 thin films by RF sputtering process parameters

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Nanomechanical and microwave dielectric properties of SrBi4Ti4O15 thin films sputtered on amorphous substrates by rf sputtering

Cited by 7 publications

References 20 publications

Optical and Microwave Dielectric Properties of Phase Pure (K0.5Na0.5)NbO3 Thin Films Deposited by RF Magnetron Sputtering

Optical and Microwave Dielectric Properties of Phase Pure (K0.5Na0.5)NbO3 Thin Films Deposited by RF Magnetron Sputtering

Investigation of surface scaling, optical and microwave dielectric studies of Bi0.5Na0.5TiO3 thin films

Tailoring the optical properties of SrBi4Ti4O15 thin films by RF sputtering process parameters

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Product

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Optical and Microwave Dielectric Properties of Phase Pure (K_0.5Na_0.5)NbO₃ Thin Films Deposited by RF Magnetron Sputtering

Optical and Microwave Dielectric Properties of Phase Pure (K_0.5Na_0.5)NbO₃ Thin Films Deposited by RF Magnetron Sputtering