2015
DOI: 10.1016/j.tsf.2015.02.030
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Nanomechanical properties of dip coated indium tin oxide films on glass

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Cited by 18 publications
(6 citation statements)
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“…These results are in general agreement with those reported by Biswas and co-authors, which show that there is a relation between the hardness and the oxygen contents in the ITO film materials. They found that when the oxygen content increased from 6 to 10 wt% in the precursor solutions, the hardness of the corresponding ITO films decreased from 9.6 ± 0.9 GPa to 1.6 ± 0.1 GPa[42].Barna et.al and Petrov et.al reported that, oxygen, impurities and other defects may lead to grain refinement and then change the morphology of the films[43,44]. As a summary, a higher annealing temperature leads to larger grain size (as mentioned previously in Section 3.1), which, when combined with substitutions, interstitials, and/or the formation of oxygen vacancies and other point defects, may cause a hardness decrement, although this effect is not so significant in our 4 at% samples.…”
mentioning
confidence: 99%
“…These results are in general agreement with those reported by Biswas and co-authors, which show that there is a relation between the hardness and the oxygen contents in the ITO film materials. They found that when the oxygen content increased from 6 to 10 wt% in the precursor solutions, the hardness of the corresponding ITO films decreased from 9.6 ± 0.9 GPa to 1.6 ± 0.1 GPa[42].Barna et.al and Petrov et.al reported that, oxygen, impurities and other defects may lead to grain refinement and then change the morphology of the films[43,44]. As a summary, a higher annealing temperature leads to larger grain size (as mentioned previously in Section 3.1), which, when combined with substitutions, interstitials, and/or the formation of oxygen vacancies and other point defects, may cause a hardness decrement, although this effect is not so significant in our 4 at% samples.…”
mentioning
confidence: 99%
“…The real part of dielectric constant is originated due to the presence of free carrier electric susceptibility [19]. The real (ε 1 ) and imaginary (ε 2 ) values of dielectric constants were obtained using the expressions [19,20] ε 1 = n 2k 2 (7) ε 2 = 2nk (8) Dielectric constants depend on wavelength. The variation of dielectric constant values with wavelength were shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Several methods were available for the synthesis of the thin films of tin oxide material. They are Spray pyrolysis [6], Spin coating method [7], Sol-gel dip coating technique [8], Pulsed laser deposition [9], Polyol method [10], etc. From all the above methods, sol-gel spin coating is used in this paper for the preparation of tin oxide thin films.…”
Section: Introductionmentioning
confidence: 99%
“…Multiple gaps with different size and shape are simulated to analyze the sensing behavior of the devices with randomly distributed gaps. Before the calculation, the Poisson's ratio, Young's modulus and density of ITO are set as 0.35, [ 40 ] 140 GPa [ 41 ] and 7.15 g cm ‐3 , respectively. But the mechanical properties of the nanoscale potassium lithium titanate have rarely been studied.…”
Section: Methodsmentioning
confidence: 99%