2018
DOI: 10.1016/j.tsf.2017.10.053
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Nanomechanical properties of ion induced Si ripple patterns

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Cited by 8 publications
(3 citation statements)
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“…Since the ripple formation is the consequence of instability generation, the combined effect of differential sputtering by the projectile ions and unequal sputtering of silicon from its pure and compounds causes ripple formation. This was also observed earlier by reactive ions [14,15,37,38].…”
Section: Resultssupporting
confidence: 85%
“…Since the ripple formation is the consequence of instability generation, the combined effect of differential sputtering by the projectile ions and unequal sputtering of silicon from its pure and compounds causes ripple formation. This was also observed earlier by reactive ions [14,15,37,38].…”
Section: Resultssupporting
confidence: 85%
“…We have already observed Si 3 N 4 formation in the N 1s spectrum (Figure ). Si 3 N 4 is generally formed by N + ion implantation on the Si surface . The binding energies of all Si compounds present in mica are given in Table along with previously reported data.…”
Section: Resultsmentioning
confidence: 94%
“…At present, there are no extensive reports on metal impurity assisted ion beam induced nanostructures in domestic and foreign scientific institutes and universities. The previous investigations on the preparation of nanostructures have mainly focused on semiconductor materials [12][13][14][15][16][17][18][19], and few studies have been conducted on optical materials [20]. Moreover, the internal physical mechanism has not yet been elucidated, limiting the application and development of this technology in nanofabrication.…”
Section: Introductionmentioning
confidence: 99%