“…( 2), -------------------------------------------(2) where S intrinsic is the strain caused by the indentation in intrinsic c-Si, is the stress in the intrinsic sample, and E intrinsic is the apparent elastic modulus. Thus, we define the apparent elastic modulus measured in the heavily doped Si as -------------------------------------------------(3) In order to determine the effect of the carrier concentration on the elastic modulus for c-Si, the mean compressive stress caused by nanoindentation can be estimated to be =F/R, 15 where F is the load of the nanoindentation, R is the radius of the indenter, and is the penetration depth. If taking F = 5 mN during loading, R 50 nm, and 150 nm (penetration depth corresponding to 5 mN), considering the surface region which can be affected by light and ensuring purely elastic deformation is taking place alone, we estimate 20 GPa.…”