Nanometer interface and materials control for multilayer EUV-optical applications

Louis, Eric; Yakshin, Andrey; Tsarfati, T.; Bijkerk, F.

doi:10.1016/j.progsurf.2011.08.001

Cited by 129 publications

(118 citation statements)

References 122 publications

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“…2 Due to its low resistivity and low solubility with Cu, 3 Ru has been used as a Cu diffusion barrier and/or Cu seed layer in integrated circuits with copper interconnect technology. 4 Other applications for Ru thin films are as bottom electrode in capacitors based on high-K materials, 5 or as capping layer for optics designed for extreme ultraviolet lithography (EUVL) 6,7,8,9 due to its low sensitivity for oxidation. 10 In the last three applications, diffusion (either copper or oxygen) towards deeper layers is one of the main threats for their performance.…”

Section: Introductionmentioning

confidence: 99%

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

Ribera

Kruijs

Sturm

et al. 2016

Journal of Applied Physics

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In vacuo high-sensitivity low energy ion scattering (HS-LEIS) has been used to investigate the initial growth stages of DC sputtered Ru on top of Si, SiN and SiO2. The high surface sensitivity of this technique allowed an accurate determination of surface coverages and thicknesses required for closing the Ru layer on all three substrates. The Ru layer closes (100% Ru surface signal) at about 2.0, 3.2 and 4.7 nm on top of SiO2, SiN and Si, respectively. In-depth Ru concentration profiles can be reconstructed from the Ru surface coverages when considering an error function like model. The large intermixing (4.7 nm) for the Ru-on-Si system is compared to the reverse system (Si-on-Ru), where only 0.9 nm intermixing occurs. The difference is predominantly explained by the strong Si surface segregation that is observed for Ru-on-Si. This surface segregation effect is also observed for Ru-on-SiN, but is absent for Ruon-SiO2. For this last system, in vacuo HS-LEIS analysis revealed surface oxygen directly after deposition, which suggests an oxygen surface segregation effect for Ru-on-SiO2. In vacuo XPS measurements confirmed this hypothesis based on the reaction of Ru with oxygen from the SiO2, followed by oxygen surface segregation.

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Section: Introductionmentioning

confidence: 99%

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

Ribera

Kruijs

Sturm

et al. 2016

Journal of Applied Physics

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“…49 The polarization degree or phase shift has to be taken into account in the merit function during multilayer design to achieve the broadband effect. [50][51][52] A high polarization degree of up to 98.7% with an average reflectance for s-polarized light of 5.5% to 6.1% has been demonstrated over the wavelength range of k ¼ 8.5-11.7 nm by Wang et al An aperiodic Mo/Y multilayer was used in this experiment and the results are shown in Figure 4. 52 A multilayer transmission phase retarder with 42 phase shift in the range of k ¼ 13.8-15.5 nm was also realized using Mo/ Si multilayers.…”

Section: Broadband Multilayer Polarizermentioning

confidence: 77%

“…A detailed discussion on the multilayer physics and deposition techniques can be found in the review papers. [5][6][7][8][9] Here, we mainly focus on methods to tune and manipulate the spectral properties of multilayer optics.…”

Section: Introductionmentioning

confidence: 99%

Spectral tailoring of nanoscale EUV and soft x-ray multilayer optics

Huang

Медведев

Kruijs

et al. 2017

Applied Physics Reviews

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Extreme ultraviolet and soft X-ray (XUV) multilayer optics have experienced significant development over the past few years, particularly on controlling the spectral characteristics of light for advanced applications like EUV photolithography, space observation, and accelerator- or lab-based XUV experiments. Both planar and three dimensional multilayer structures have been developed to tailor the spectral response in a wide wavelength range. For the planar multilayer optics, different layered schemes are explored. Stacks of periodic multilayers and capping layers are demonstrated to achieve multi-channel reflection or suppression of the reflective properties. Aperiodic multilayer structures enable broadband reflection both in angles and wavelengths, with the possibility of polarization control. The broad wavelength band multilayer is also used to shape attosecond pulses for the study of ultrafast phenomena. Narrowband multilayer monochromators are delivered to bridge the resolution gap between crystals and regular multilayers. High spectral purity multilayers with innovated anti-reflection structures are shown to select spectrally clean XUV radiation from broadband X-ray sources, especially the plasma sources for EUV lithography. Significant progress is also made in the three dimensional multilayer optics, i.e., combining micro- and nanostructures with multilayers, in order to provide new freedom to tune the spectral response. Several kinds of multilayer gratings, including multilayer coated gratings, sliced multilayer gratings, and lamellar multilayer gratings are being pursued for high resolution and high efficiency XUV spectrometers/monochromators, with their advantages and disadvantages, respectively. Multilayer diffraction optics are also developed for spectral purity enhancement. New structures like gratings, zone plates, and pyramids that obtain full suppression of the unwanted radiation and high XUV reflectance are reviewed. Based on the present achievement of the spectral tailoring multilayer optics, the remaining challenges and opportunities for future researches are discussed.

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“…Ceramabond Sapphire Optical fiber 75,76 . These devices yield 470% EUV reflectivity, although 75% yield is theoretically possible with superior mirror surface protection and new absorber and spacer material layers.…”

Section: Ti Ptmentioning

confidence: 99%

Precision in harsh environments

2016

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Microsystems are increasingly being applied in harsh and/or inaccessible environments, but many markets expect the same level of functionality for long periods of time. Harsh environments cover areas that can be subjected to high temperature, (bio)-chemical and mechanical disturbances, electromagnetic noise, radiation, or high vacuum. In the field of actuators, the devices must maintain stringent accuracy specifications for displacement, force, and response times, among others. These new requirements present additional challenges in the compensation for or elimination of cross-sensitivities. Many state-of-the-art precision devices lose their precision and reliability when exposed to harsh environments. It is also important that advanced sensor and actuator systems maintain maximum autonomy such that the devices can operate independently with low maintenance. The next-generation microsystems will be deployed in remote and/or inaccessible and harsh environments that present many challenges to sensor design, materials, device functionality, and packaging. All of these aspects of integrated sensors and actuator microsystems require a multidisciplinary approach to overcome these challenges. The main areas of importance are in the fields of materials science, micro/nano-fabrication technology, device design, circuitry and systems, (first-level) packaging, and measurement strategy. This study examines the challenges presented by harsh environments and investigates the required approaches. Examples of successful devices are also given.

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Nanometer interface and materials control for multilayer EUV-optical applications

Cited by 129 publications

References 122 publications

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

Spectral tailoring of nanoscale EUV and soft x-ray multilayer optics

Precision in harsh environments

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