Nanoparticle formation in 25-nm-SiO2 thin layer by germanium negative-ion implantation and its capacitance–voltage characteristics

Tsuji, Hiroshi; Arai, Nobutoshi; Gotoh, Naoyuki; Minotani, Takashi; Kojima, Kenji; Adachi, Kouichiro; Kotaki, Hiroshi; Ishibashi, Toyotsugu; Gotoh, Yasuhito; Ishikawa, Junzo

doi:10.1016/j.nimb.2006.12.156

Cited by 8 publications

(4 citation statements)

References 15 publications

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“…These suggest Ge departure from the multilayer that needs to be explained. As a matter of fact, thermal diffusion of Ge atoms in SiO 2 towards the substrate was found to be notable in the literature in the case of annealing at high temperatures [17,18].…”

Section: Methodsmentioning

confidence: 99%

Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO₂ using parametric models

Basa

Petrik

Fried

et al. 2008

Phys. Status Solidi (c)

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Ge‐rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured and evaluated by spectroscopic ellipsometry. Effective medium theory (EMT) and parametric semiconductor models have been used to model the dielectric function of the layers. Systematic dependences of the layer thickness and the oscillator parameters have been found on the annealing temperature (nanocrystal size). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 99%

Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO₂ using parametric models

Basa

Petrik

Fried

et al. 2008

Phys. Status Solidi (c)

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“…10 Delta layers of Ag and Ge nanoparticles were also formed near the boundary of Si and SiO 2 and near the center of SiO 2 film, respectively. 11…”

Section: Nanoparticle Formationmentioning

confidence: 99%

“…It is because the incoming charge due to the ion flux is negative and the outgoing charge due to secondary electron is also negative; thus, the charge balance could be easily obtained at the surface. [5][6][7][8] By using the negative-ion implantation technique, we could perform the following applications such as surface modification of micrometer-sized particles without scattering of the target particles, 9 nanometer metal-particle formation in a thin insulator film for quantum devices, 10,11 and cell adhesion control of a polymer surface by implantation. 12,13 In negative-ion-beam deposition atomic-bonding processes through ion's kinetic energy ͑kinetic bonding͒ take place because of the ion's small internal potential energy ͑electron affinity͒ and it promotes the formation of metastable materials.…”

Section: Introductionmentioning

confidence: 99%

Negative-ion source applications (invited)

Ishikawa

2008

Review of Scientific Instruments

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In this paper heavy negative-ion sources which we developed and their applications for materials science are reviewed. Heavy negative ions can be effectively produced by the ejection of a sputtered atom through the optimally cesiated surface of target with a low work function. Then, enough continuous negative-ion currents for materials-science applications can be obtained. We developed several kinds of sputter-type heavy negative-ion sources such as neutral- and ionized-alkaline metal bombardment-type heavy negative-ion source and rf-plasma sputter type. In the case where a negative ion is irradiated on a material surface, surface charging seldom takes place because incoming negative charge of the negative ion is well balanced with outgoing negative charge of the released secondary electron. In the negative-ion implantation into an insulator or insulated conductive material, high precision implantation processing with charge-up free properties can be achieved. Negative-ion implantation technique, therefore, can be applied to the following novel material processing systems: the surface modification of micrometer-sized powders, the nanoparticle formation in an insulator for the quantum devices, and the nerve cell growth manipulation by precise control of the biocompatibility of polymer surface. When a negative ion with low kinetic energy approaches the solid surface, the kinetic energy causes the interatomic bonding (kinetic bonding), and formation of a metastable material is promoted. Carbon films with high constituent of sp(3) bonding, therefore, can be formed by carbon negative-ion beam deposition.

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“…The generation of a high fraction of negative ions can stimulate unprecedented interest in both fundamental research and practical applications, such as the design of low-flux negative ion beam sources (e.g., negative hydrogen ions and heavy halogen negative ion sources , ), the construction of neutral particle detectors for outer space atmospheric and planet evolution research, , candidates for laser cooling of negative ions, − O 2 – ions as the environment- and health-friendly ions for indoor or outdoor environmental purification, and C – ions for biocompatibility control of nerve cell patterning and nervous system repair . Moreover, the emergence of negative ion implantation has recently paved the way for nanoparticle formation in insulators for quantum and light-emitting devices and H – /D – ion injection in an ITER device for a fusion experiment . Therefore, vast attention has been focused on achieving low-cost, high-fraction, wide-energy-range directional negative ion beams.…”

Section: Introductionmentioning

confidence: 99%

Evidence for the Formation of a Local Pre-Existing Surface Band-Gap Electronic State by F^– Projectile Grazing Scattering from a LiF(001) Surface

Zhou

Wang

et al. 2022

J. Phys. Chem. C

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The experimental measurement of slow F − ions (v < 0.1 a.u.) scattered from a clean and flat LiF(001) surface at a grazing angle of incidence shows that there is a large fraction of F − projectile destruction. Here, from detailed energy defect and transition probability calculations, we find that the large F − destruction observed was due to the formation of a local pre-existing surface bandgap electronic state, Li 2 + (1 2 Σ u + ,R = a LiF /√2) (a LiF = lattice constant of the LiF crystal), via a nearly resonant charge transfer between the F − projectile and two nearest-neighbor Li + lattice ions along the ⟨110⟩ or ⟨1̅ 10⟩ channel at the LiF(001) surface. In combination with the related energy loss, the physical pictures of the producing mechanism of various products for 1 keV F + incidence based on this state are also presented. An internuclear distance of R = 2.84 Å makes the efficient and controllable preparation of this state on a LiF surface possible, paving the way for atomic-scale microdevice fabrication.

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Nanoparticle formation in 25-nm-SiO2 thin layer by germanium negative-ion implantation and its capacitance–voltage characteristics

Cited by 8 publications

References 15 publications

Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO₂ using parametric models

Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO₂ using parametric models

Negative-ion source applications (invited)

Evidence for the Formation of a Local Pre-Existing Surface Band-Gap Electronic State by F^– Projectile Grazing Scattering from a LiF(001) Surface

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Nanoparticle formation in 25-nm-SiO2 thin layer by germanium negative-ion implantation and its capacitance–voltage characteristics

Cited by 8 publications

References 15 publications

Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO2 using parametric models

Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO2 using parametric models

Negative-ion source applications (invited)

Evidence for the Formation of a Local Pre-Existing Surface Band-Gap Electronic State by F– Projectile Grazing Scattering from a LiF(001) Surface

Contact Info

Product

Resources

About

Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO₂ using parametric models

Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO₂ using parametric models

Evidence for the Formation of a Local Pre-Existing Surface Band-Gap Electronic State by F^– Projectile Grazing Scattering from a LiF(001) Surface