2006
DOI: 10.1016/j.cplett.2006.05.074
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Nanopatterning of hydroxy-terminated self-assembled monolayer taking advantage of terminal group modification

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Cited by 12 publications
(18 citation statements)
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“…Oxidations have been utilized to introduce hydroxyl or acid functionalized moieties on SAMs, 35,62,64,[147][148][149] which can be used for esterification reactions described above to introduce other molecules as summarized in Fig. 12.…”
Section: Surface Chemistrymentioning
confidence: 99%
“…Oxidations have been utilized to introduce hydroxyl or acid functionalized moieties on SAMs, 35,62,64,[147][148][149] which can be used for esterification reactions described above to introduce other molecules as summarized in Fig. 12.…”
Section: Surface Chemistrymentioning
confidence: 99%
“…The most popular SAM resist is based on trichloro-silane that bonds readily to −OH terminated substrate . However, SAM resists are too thin (typically 1–2 nm) for acting as dry etching mask; and they have very low sensitivity, typically one order lower than that of PMMA . Additionally, long-term stability of SAMs is limited for a range of reagents/media. , …”
Section: Introductionmentioning
confidence: 99%
“…SAMs can be chemically patterned at the nanometer scale by a variety of methods, and these chemical patterns can then be developed through either covalent or noncovalent interactions with molecules, nanoparticles, and biomolecules. [3][4][5][6][7][8][9][10][11] One direct strategy to pattern SAMs is to utilize them as resist materials for various forms of lithography. 3,[6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] There has been a significant research effort in recent decades in developing SAMs as electron beam resists with nanoscale resolution.…”
Section: Introductionmentioning
confidence: 99%
“…3,[6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] There has been a significant research effort in recent decades in developing SAMs as electron beam resists with nanoscale resolution. 3,[6][7][8][12][13][14][15][18][19][20][21][22] These research efforts on SAMs complement work to develop "unconventional" electron beam lithography ͑EBL͒ resists. 23 The damage mechanisms on several SAMs have been elucidated in considerable detail.…”
Section: Introductionmentioning
confidence: 99%