Nanopatterning with Microdomains of Block Copolymers using Reactive-Ion Etching Selectivity

Asakawa, Koji; Hiraoka, Toshiro

doi:10.1143/jjap.41.6112

Cited by 90 publications

(71 citation statements)

References 13 publications

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“…It was considered that the defect generation was attributable to resist functionality of PMMA weakened by exposure to UV light used to cause the benzophenone photochemistry and to remove a residual layer by UV/ozone. In previous reports on block copolymer lithography using PS-block-PMMA, PMMA regions are rapidly etched by oxygen plasma in dry etching in comparison with PS regions [12,13]. In our study, exposure to UV/ozone is used for removal of a residual layer as a dry etching process.…”

Section: Tuning Patterned Metal Line Width By Controlled Wet Side-etcmentioning

confidence: 98%

Reactive-monolayer-assisted Thermal Nanoimprint Lithography

Kubo

Nakagawa

2012

J. Photopol. Sci. Technol.

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This article gives an overview of reactive-monolayer-assisted thermal nanoimprint lithography (R-TNIL) for the fabrication of patterned metal thin layers on substrates by simple wet etching using a thermoplastic polymer resist layer assisted by photochemically grafted polymer layer. A photoreactive monolayer causing a photoinduced graft reaction on the metal surface anchors interfacial resist polymers, resulting in the suppression of thermally induced dewetting of the resist layer and the improvement of lateral pattern resolution of metal thin layers. Line widths of metal patterns could be tuned by controlled side etching. Enhanced adhesion of resist layers was revealed by lateral force curves measured by scanning probe microscopy. It was demonstrated as an application that transparent conductive substrates having metal mesh structures were fabricated by R-TNIL. We also demonstrated R-TNIL involving electrodeposition, which allowed the preparation of metal patterns with controlled aspect ratio. It was proved that the photoreactive monolayer played important roles to fabricate submicrometer patterns of metal thin layers.

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Section: Tuning Patterned Metal Line Width By Controlled Wet Side-etcmentioning

confidence: 98%

Reactive-monolayer-assisted Thermal Nanoimprint Lithography

Kubo

Nakagawa

2012

J. Photopol. Sci. Technol.

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“…The resulting polymer was precipitated in methanol. 1 H NMR (CDCl 3 , 400 MHz, δ): 1.41 (br, 2H, CH-CH 2 ), 1.84 (br, 1H, CH-CH 2 ), 6.45-6.57 (br, 2H, CH(2,5)), 7.08-7.25 (br, 3H, CH (3,4,5)). …”

Section: Preparation Of the Psmentioning

confidence: 99%

“…However, to be used as a next generation lithographic mask, BCPs must possess several important properties such as strongly segregating blocks, facile perpendicular orientation control on thin films, and high etch contrasts [2]. To that end, poly(styreneblock-methyl methacrylate) (PS-b-PMMA) has been well studied by researchers as it can be used to create highly ordered structures with a perpendicular orientation on thin films by using thermal annealing and a neutral layer to tailor the chemical properties of the substrate interface [3][4][5]. However, as the segregation strength of PS-b-PMMA is relatively weak, the minimum pattern dimension (L 0 ) that can be achieved is approximately 24 nm and thus sub-10 nm feature sizes cannot be obtained [6].…”

Section: Introductionmentioning

confidence: 99%

Perpendicularly-Oriented Block Copolymers Containing Silicon-Rich Hyperbranched Polymers for High Resistance to O<sub>2</sub>-RIE

Seina

Odashima

Seshimo

et al. 2017

J. Photopol. Sci. Technol.

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The directed self-assembly (DSA) of block copolymers (BCPs) has recently become a viable alternative technique for the nanofabrication of semiconductors. To facilitate pattern transfer onto silicon (Si) wafers from BCP masks, a novel class of Si-rich BCPs with hyperbranched polysiloxane side chains were synthesized in this report. The resistance to oxygen-reactive ion etching (O 2 -RIE) was quantified for the linear and modifiedhyperbranched polysiloxanes, revealing that the modified-hyperbranched polysiloxanes exhibited increased O 2 -RIE resistances. Furthermore, by tailoring the chemical properties on the end-groups of the polysiloxane side chains, atomic force microscopy (AFM) and scanning electron microscopy (SEM) studies revealed that perpendicularly-oriented lamellae could be observed on the thin films.

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“…[12][13][14] However, to apply such materials for the lithographic process, high etching selectivity between the two composite polymers is required in order to transfer the pattern to the substrate. 15 In this work, we report a fabrication process of sub-10 nm line-and-space patterns using the DSA materials featuring high χ parameter and high etch selectivity. We applied one of the most promising DSA materials, namely, POSS containing DSA materials, to realize sub-10 nm line-and-space patterning processes.…”

Section: Introductionmentioning

confidence: 99%

Sub-10-nm patterning process using directed self-assembly with high χ block copolymers

Kihara¹,

Seino²,

Sato³

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The perpendicularly orientated lamellar structure of the self-organized diblock copolymer is an attractive template for sub-10-nm line-and-space pattern formation. We propose a method of evaluating the neutral layer (NL) whose performance has an important bearing on the perpendicular orientation of the lamellar structure. The random copolymer of methyl methacrylate and i-butyl POSS methacrylate (MAIBPOSS) has been investigated as an NL for a polymethylmethacrylate-b-polymethacrylethylPOSS (PMMA-b-PMAIBPOSS) lamellar structure. PMMA-b-PMAIBPOSS material has the potential to form sub-10 nm line-and-space pattern, in addition to high etch selectivity due to its POSS structure. Under the free surface, PMMA-b-PMAIBPOSS film on the random copolymer layer showed horizontal orientation. However, a half-pitch of a 7-nm finger pattern structure was observed by peeling off the horizontally oriented layer. The upper portion of the PMMA-b-PMAIBPOSS film was eliminated till proximity of the random copolymer layer by CF 4 gas etching. From the result, it was revealed that the PMMA-r-PMAIBPOSS works as an NL. It was confirmed that the contact angle analysis using an appropriate polymer is a suitable method for evaluation of the surface energy performance of the copolymer with the attribute of high segregation energy.

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Nanopatterning with Microdomains of Block Copolymers using Reactive-Ion Etching Selectivity

Cited by 90 publications

References 13 publications

Reactive-monolayer-assisted Thermal Nanoimprint Lithography

Reactive-monolayer-assisted Thermal Nanoimprint Lithography

Perpendicularly-Oriented Block Copolymers Containing Silicon-Rich Hyperbranched Polymers for High Resistance to O<sub>2</sub>-RIE

Sub-10-nm patterning process using directed self-assembly with high χ block copolymers

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