Nanophotonic Pockels modulators on a silicon nitride platform

Alexander, Koen; George, John P.; Verbist, Jochem; Neyts, Kristiaan; Kuyken, Bart; Thourhout, Dries Van; Beeckman, Jeroen

doi:10.1038/s41467-018-05846-6

Cited by 210 publications

(126 citation statements)

References 35 publications

Supporting

Mentioning

102

Contrasting

Order By: Relevance

“…Typically, the width of waveguides with moderate refractive contrast such as Si3N4 waveguide is larger. The widths of the Si3N4 waveguides in references [3][4][5][6][7][8][9][10][11][12] are 500-11000 nm. On the other hand, the width of the SOI waveguides is typically about 500 nm.…”

Section: Flattened Luneburg Couplermentioning

confidence: 99%

“…Consequently, the Kerr nonlinearity of the Si3N4 has been exploited to implement frequency comb generation [4] and supercontinuum generation [5]. Different functions such as polarizers [6], grating couplers [7], multiple-wavelength oscillator [8], modulators [9], arrayed-waveguide gratings [10], resonators [11], continuous wave-pumped wavelength converters [12], and biosensors [13] have also been implemented in Si3N4 platform. On the other hand, SOI platform, due to its high index-contrast and compatibility with CMOS foundry processes, allows us to implement functions which are very difficult to implement in low index-contrast waveguide platforms, such as photonic crystals (PhC), grating couplers, and wavelength size cavities with a smaller footprint [14].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Coupling Si3N4 waveguide to SOI waveguide using transformation optics

Badri¹,

Gilarlue²

2020

Optics Communications

View full text Add to dashboard Cite

Silicon nitride (Si3N4) planar waveguide platform combined with silicon-on-insulator (SOI) devices offer a whole new generation of system-on-chip applications. Therefore, efficient coupling of an Si3N4 waveguide to an SOI waveguide is essential. We present a coupler to interface a 1.8 µm-wide Si3N4 waveguide to a 0.5 µm-wide SOI waveguide based on the focusing property of the Luneburg lens. In order to match the refractive indices of the waveguides with the edges of the lens, one side of the lens is flattened with quasi-conformal transformation optics. The designed coupler is implemented by graded photonic crystals. The three-dimensional numerical simulations indicate that the 1.93 µm-long coupler has an average coupling loss of 0.13 dB in the C-band.

show abstract

Section: Flattened Luneburg Couplermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Coupling Si3N4 waveguide to SOI waveguide using transformation optics

Badri¹,

Gilarlue²

2020

Optics Communications

View full text Add to dashboard Cite

show abstract

“…Later this method was extended to other ferro-electric materials such as PZT and an effective Pockels coefficient reff ~150 pm/V was demonstrated. In [17] these layers were integrated on SiN ring resonators, demonstrating a VπL≈ 3.2 V.cm, low propagation losses (α≈1 dB/cm), bandwidths beyond 33 GHz and data rates of 40 Gbps.…”

Section: Integration With Ferro-electric Materialsmentioning

confidence: 99%

Heterogeneous Integration on Silicon Photonics

et al. 2018

Self Cite

View full text Add to dashboard Cite

To enhance the functionality of the standard silicon photonics platform and to overcome its limitations, in particular for light emission, ultrafast modulation and non-linear applications, integration with novel materials is being investigated by several groups. In this paper we will discuss, amongst others, the integration of silicon waveguides with ferroelectric materials such as PZT and BTO, with electro-optically active polymers, with 2Dmaterials such as graphene and with III-V semiconductors through epitaxy. We discuss both the technology and design aspects.

show abstract

“…40,41 Furthermore, low-loss hybrid BTO− silicon waveguides have already been demonstrated, 42 as well as electro-optic operation in hybrid BTO−silicon structures 39,43,44 on 200 mm wafer sizes. 45,46 Other platforms, such as those based on the transition metal oxides lead zirconate titanate 47 and lithium niobate, 48 have also been explored for integrated Pockels devices. However, their performance in regard to static power consumption is still unclear.…”

mentioning

confidence: 99%

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

et al. 2019

View full text Add to dashboard Cite

As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network traffic continues its rapid expansion, the power consumption of such circuits becomes a critical consideration. Electrically tunable devices in photonic integrated circuits contribute significantly to the total power budget, as they traditionally rely on inherently power-consuming phenomena such as the plasma dispersion effect or the thermo-optic effect for operation. Here, we demonstrate ultra-low-power refractive index tuning in a hybrid barium titanate (BTO)− silicon nitride (SiN) platform integrated on silicon. We achieve tuning by exploiting the large electric field-driven Pockels effect in ferroelectric BTO thin films of sub-100 nm thickness. The extrapolated power consumption for tuning a free spectral range (FSR) in racetrack resonator devices is only 106 nW/FSR, several orders of magnitude less than many previous reports. We demonstrate the technological potential of our hybrid BTO− SiN technology by compensating thermally induced refractive index variations over a temperature range of 20°C and by using our platform to fabricate tunable multiresonator optical filters. Our hybrid BTO−SiN technology significantly advances the field of ultra-low-power integrated photonic devices and allows for the realization of next-generation efficient photonic circuits for use in a variety of fields, including communications, sensing, and computing.

show abstract

Nanophotonic Pockels modulators on a silicon nitride platform

Cited by 210 publications

References 35 publications

Coupling Si3N4 waveguide to SOI waveguide using transformation optics

Coupling Si3N4 waveguide to SOI waveguide using transformation optics

Heterogeneous Integration on Silicon Photonics

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

Contact Info

Product

Resources

About