Nanophotonic resonators for InP solar cells

Goldman, Daniel A.; Murray, Joseph; Munday, Jeremy N.

doi:10.1364/oe.24.00a925

Cited by 20 publications

(7 citation statements)

References 35 publications

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“…The occurring Mie resonance results in forward scattering into the substrate. [4][5][6][7][8][9][40][41][42][43][44] In hexagonal arrays, reflectance dips due to a grating effect (Wood-Rayleigh anomaly) occur at 'p/2′ and '(p/2)•(3) 1/2 ′, where 'p' is the period. In the investigated wavelength range, for the hexagonal period spacing of ~ 550 nm the dip appears at a wavelength of ~ 480 nm.…”

Section: Solar-weighted Reflectance Of Structured Tio 2 Np-based Optimentioning

confidence: 99%

“…The obtained J sc enhancement agrees well with data reported in a simulation study for a similar type of structuring on InP solar cells. 44 .…”

Section: Solar-weighted Reflectance Of Structured Tio 2 Np-based Optimentioning

confidence: 99%

“…However, fabricating nanoresonators [40][41][42][43][44] from TiO 2 thin films would require deposition and subsequent patterning steps and may not be compatible with providing these structures on arbitrary substrates and prefabricated devices. On the other hand, soft imprinting or embossing methods offer a simple and elegant way to form Mie resonator arrays by compacting metal-oxide nanoparticles from solution.…”

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Embossed Mie resonator arrays composed of compacted TiO2 nanoparticles for broadband anti-reflection in solar cells

Visser

Chen

Désières

et al. 2020

Sci Rep

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Mie resonator arrays formed by embossing titanium dioxide (tio 2) nanoparticles (nps) from solution are investigated as optical coatings for anti-reflection applications. Compacted nanoparticle assemblies offer unique possibilities to tailor the effective refractive index (RI). Here, we demonstrate a simple table-top, low pressure, and low temperature method to fabricate structured optical coatings. TiO 2 nanostructures in the form of nanodisks support Mie resonances in the visible wavelength spectrum and exhibit strong forward scattering into the high index substrates, making them suitable as broadband anti-reflection coatings for solar cells. TiO 2 np-based nanodisk arrays are designed, fabricated, and characterized regarding their anti-reflection properties on Si, GaAs, and InP substrates and solar cells. Detailed finite-difference time-domain simulations are performed to optimize the tio 2 NP-based Mie resonator arrays for the broadband anti-reflection as well as to explain the measured reflectance spectra. The solar-weighted reflectance is used as a figure of merit (FoM). TiO 2 nanodisk arrays on Si show a FoM of ~ 7% in the 400-1,100 nm wavelength spectrum; similar values are obtained for GaAs and InP substrates. TiO 2 nanodisk arrays embossed directly on prefabricated planar single-junction Si, GaAs, and InP solar cells result in an appreciable increase (~ 1.3 times) in the short-circuit current densities. Recently, sub-wavelength dielectric Mie resonator arrays have been reported for applications such as omnidirectional broadband anti-reflection. 1,2 Si nanodisk arrays on Si substrates show low average surface reflectance over the visible-NIR wavelength region. 3 Surface reflection reduction 4-7 plays a major part in increasing the performance of solar cells. For inorganic semiconductor solar cell materials, e.g., Si and III-Vs, due to their high refractive indices (~ 3-4) the reflectance loss (~ 30-40%) is significant. To reduce this, the solar cell surface can either be structured directly or an additional (structured) optical coating can be used. Direct structuring of solar cells can degrade its performance due to process induced defects and surface recombination and invariably requires additional passivation procedures/coatings. Such issues become more significant for thin film solar cells (thickness of ~ 2 µm or less). These limitations may be overcome by depositing a structured optical layer instead. Anti-reflection coatings (ARCs) include commonly used traditional thin-film dielectrics (e.g., silicon dioxide (SiO 2) and silicon nitride (Si x N y)), metal nanoparticles, 8,9 and dielectric nanostructures 3,10,11. While thin film dielectrics are easier to fabricate, multilayers are often required to achieve broadband anti-reflection. Metallic nanoparticles suffer from parasitic absorption in the metal and the resonances are highly sensitive to the RI of the matrix below or around the nanoparticles. 12 High-index dielectric (e.g., Si) Mie resonator arrays placed on Si or substrates with similar refract...

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Section: Solar-weighted Reflectance Of Structured Tio 2 Np-based Optimentioning

confidence: 99%

“…The obtained J sc enhancement agrees well with data reported in a simulation study for a similar type of structuring on InP solar cells. 44 .…”

Section: Solar-weighted Reflectance Of Structured Tio 2 Np-based Optimentioning

confidence: 99%

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confidence: 99%

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Embossed Mie resonator arrays composed of compacted TiO2 nanoparticles for broadband anti-reflection in solar cells

Visser

Chen

Désières

et al. 2020

Sci Rep

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“…The spectral response of short-wave infrared (SWIR) In 0.53 Ga 0.47 As/InP focal plane arrays (FPAs) typically covers the wavelength range of 0.9–1.7 μm. − For the visible–SWIR (vis–SWIR) In 0.53 Ga 0.47 As (hereafter referred to as InGaAs), it is extended to 0.5–1.7 μm via a substrate removing process. Apart from applications in space remote sensing, the vis–SWIR InGaAs FPAs are emerging as a very powerful technology for novel applications such as medical diagnostics and polarization imaging. − However, the sensitivities of the commercial vis–SWIR InGaAs FPAs are currently inferior to that of the silicon cameras in the wavelength range of 0.5–0.9 μm. , Because of the lower surface recombination velocity among III–V semiconductors, InP has been demonstrated to be an ideal substrate to integrate with Mie resonator arrays. , Improved light absorption and photoelectric conversion in the photocathodes for solar hydrogen production have been observed . For the backside-illuminated InGaAs PIN FPAs with a spectral response of 1–1.7 μm, periodically arranged InP Mie resonators can restrain the deleterious multiple reflection of scattered light and enhance the light absorption in the InGaAs absorber, from which enhanced quantum efficiencies and image quality can be expected.…”

Section: Introductionmentioning

confidence: 99%

Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays

Yuan

et al. 2020

ACS Appl. Electron. Mater.

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Semiconductor nanostructures with high refractive indexes are highly promising to serve as a broadband omnidirectional antireflection layer for optoelectronic device applications. InP nanopillar arrays are designed and fabricated on the backside surface of an InGaAs/InP focal plane array (FPA) via a colloidal lithography and etching process. With broadband scattering resonances, the low-aspect-ratio and quasi-periodic InP nanopillars act as Mie resonators and couple more light into the InGaAs layer by reducing absorption loss in the InP contact layer. Broadband low reflectivity down to 5%, 10−20% enhanced quantum efficiency, and 18.8% higher FPA response are realized over the wavelength range of 500−1700 nm. These results demonstrate that the InP Mie resonators can significantly improve the performance of largeformat InGaAs FPAs without image quality degradation.

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“…Due to technological progress in nano-fabrication during the last decades, in terms of control of features at subwavelength scales implemented on various materials, of devices based on light trapping in standard p/n diodes, as, e.g. based on InP with improvements above that of standard antireflection coatings [35] or in nanowires of various sorts were proposed by several research groups. For example, silicon nanowires with p-n radial junction [7,9], InP nanowire array [8,10], or nanowire based dye-sensitized solar cell [11].…”

Section: Introductionmentioning

confidence: 99%

Ultrathin mono-resonant nano photovoltaic device for broadband solar conversion

Proise¹,

Joudrier²,

Pardo³

et al. 2018

Opt. Express

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Nano-resonators can be used in photovoltaics to drastically improve the ability of the device to absorb light and generate photo-carriers, therefore enabling a reduction of the absorber volume. Conventionally, the harvest of the spectrally broad solar spectrum is achieved via the tedious engineering of multiple optical resonances. In this paper, we propose a breakthrough approach, which consists in reducing the solar spectral range with a spectral conversion layer to match only one resonance that can then be easily designed. We use a Maxwell solver and a ray-tracing code to optimize the nano-resonator and its spectral converter. We show that 66.2% optical efficiency can be theoretically achieved in less than 40 nm mean thick absorber while leading to device design enabling collection of photo-generated carriers.

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Nanophotonic resonators for InP solar cells

Cited by 20 publications

References 35 publications

Embossed Mie resonator arrays composed of compacted TiO2 nanoparticles for broadband anti-reflection in solar cells

Embossed Mie resonator arrays composed of compacted TiO2 nanoparticles for broadband anti-reflection in solar cells

Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays

Ultrathin mono-resonant nano photovoltaic device for broadband solar conversion

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