Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission

Shan, Maocheng; Guo, Chenyu; Zhao, Yongming; Chen, Qiushuang; Deng, Lizhen; Zheng, Zhihua; Tan, Shizhou; Guo, Wei; Dai, Jiangnan; Wu, Feng; Li, Xiaohang; Chen, Chang

doi:10.1021/acsanm.2c02689

Cited by 8 publications

(3 citation statements)

References 36 publications

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“…Due to the improvement in LEE, compared to the AlGaN-based DUV-LEDs with Ni/Au as a p-type electrode, the wavelength of 278 nm, the wall insertion efficiency of AlGaN-based DUV-LEDs is improved by 57%. In addition to the study of highly reflective electrode structures, other reflective structures such as photonic crystals [96], Distributed Bragg Reflectors(DBRs) [97], and omnidirectional reflectors [98] have been investigated for the improvement of LEE. The LEE of LEDs is also improved by the increase of the sidewall emission, so the study of the sidewalls of AlGaNbased DUV-LEDs is also another idea to enhance the LEE of the TM mode [108].…”

Section: Structural Design Of Highlight Extractionmentioning

confidence: 99%

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Huang,

Li,

Xiang

2024

IEEE Access

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Due to environmental friendliness, small size, long lifetime, and adjustable light-emitting wavelength, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) have great development potential in the fields of biochemical detection, sterilization and disinfection, and non-line-of-sight communication. After decades of research, AlGaN-based DUV-LEDs have significantly improved in the direction of luminous efficiency. However, the luminous efficiency of the present AlGaN-based DUV-LEDs is still at a low level compared with that of the fully commercialised nitride blue LEDs, making it difficult to meet the market demand. This paper first introduces the present development status of AlGaN-based DUV-LEDs and the reasons for the low luminous efficiency. Then from the preparation of AlGaN-based, AlGaN doping and the design of AlGaN-based DUV-LEDs structure to elaborate the research progress in recent years in the direction of improving the luminous efficiency of AlGaN-based DUV-LEDs. Finally discusses the challenges that the AlGaN-based DUV-LEDs are presently faced with, and their future opportunities for development. INDEX TERMS AlGaN-based DUV-LEDs;luminous efficiency;AlGaN-based;AlGaN doping;AlGaNbased DUV-LEDs structure I. INTRODUCTION

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Section: Structural Design Of Highlight Extractionmentioning

confidence: 99%

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Huang,

Li,

Xiang

2024

IEEE Access

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“…14, x FOR PEER REVIEW 12 of 18 without a FSODR, the LEE of DUV LEDs with a FSODR increased by 60%. Recently, Shan et al researched wafer-scale AlGaN-based deep ultraviolet (DUV) nanoporous (NP) distributed Bragg reflectors (DBRs), as shown in Figure8; the experimental results showed that due to the reflection effect caused by the NP-DBRs, the light extraction of both the TE and TM modes improved[107].…”

mentioning

confidence: 99%

Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Kang

Zhang

et al. 2023

Micromachines

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AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to their advantages of energy conservation, environmental protection and easy miniaturization realization, they have garnered much interest and been widely researched. However, compared with InGaN-based blue LEDs, the efficiency of AlGaN-based DUV LEDs is still very low. This paper first introduces the research background of DUV LEDs. Then, various methods to improve the efficiency of DUV LED devices are summarized from three aspects: internal quantum efficiency (IQE), light extraction efficiency (LEE) and wall-plug efficiency (WPE). Finally, the future development of efficient AlGaN-based DUV LEDs is proposed.

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“…There are also methods of isolating IC elements using etched grooves on the surface of the substrates. In particular, insulation using V-grooves, filled polycrystalline silicon (VIP-method, VIP-V-brave isolation polisilicon) is based on vertical anisotropic etching of silicon substrates with formation of V-shaped grooves filled with polycrystalline silicon [9,10]. V-ATE -technology (V-ATE -vertical anisotropic etch) is available a variant of the method of combined isolation of components, in which the separation tracks are not filled with silicon dioxide or others insulating materials [10,11].…”

mentioning

confidence: 99%

Isolation of Responsive Elements of Planar Multi-Element Photodiodes

Kukurudziak

2023

East Eur. J. Phys.

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In the mass production of multi-element silicon p-i-n photodiodes, the problem of systematic rejection of products due to a decrease in the insulation resistance between the active elements of photodetectors has been revealed. The purpose of this work is to study the causes of insulation resistance degradation and to establish optimal methods for avoiding this phenomenon. A comparative analysis of three insulation methods was carried out: classical insulation by the surface of a non-conductive substrate and a dielectric layer; insulation by means of mesaprofile grooves with a dielectric film; insulation by means of areas of limitation of surface leakage channels isotypic with the substrate material (in this case, p+-type) formed in the gaps between active elements. The study found that the reason for the deterioration of the insulation resistance between the active elements of photodiodes is the presence of conductive inversion channels at the Si-SiO2 interface due to the use of silicon with high resistivity. One mechanism for the formation of inversion channels is the redistribution of impurities in the masking oxide (in particular, phosphorus) and their diffusion to the interface during thermal operations. Another mechanism for the formation of inversion layers is the diffusion of boron from silicon into SiO2 during heat treatment due to the fact that the boron segregation coefficient is less than one. In the manufacture of samples with insulation using non-conductive areas of the substrate, a decrease in insulation resistance was observed as the technological route was performed (after each subsequent operation, the resistance degraded). The degree of degradation can be reduced by reducing the duration of thermal operations. It has been shown that reducing the thickness of the masking oxide causes a decrease in insulation resistance. When using mesa-technology, it is possible to increase the insulation resistance by eliminating the high-temperature oxidation operation and, in fact, due to the absence of a masking coating during phosphorus deposition. Insulation by means of p+-type areas in the gaps between the active elements allows to obtain the highest insulation resistance values. The formation of these regions with a width of 100 μm in the gaps with a width of 200 μm allowed us to obtain an insulation resistance of 25-30 MΩ. To ensure the insulation of the active elements of photodiodes by this method, two thermal operations are added to the technological route. The number of thermal operations can be reduced by doping the entire silicon surface with a low boron concentration before forming a masking coating.

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Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission

Cited by 8 publications

References 36 publications

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

A Review of Recent Research Advances on AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Isolation of Responsive Elements of Planar Multi-Element Photodiodes

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