Nanoporous Pd-Cu thin films as highly active and durable catalysts for oxygen reduction in alkaline media

Cu/CuOx@C Composite as a High-Efficiency Electrocatalyst for Oxygen Reduction Reactions

“…The other electrocatalyst samples (Cu@C-600, Cu@C-700, and Cu@C-900) were similarly prepared by varying the final pyrolysis temperature. The wide-angle X-ray powder diffraction pattern of Cu@C in Figure 2a shows articulated diffraction tops situated at 2θ = 43.2°, 50.4°and 74.1°, highlighting the (111), (200), and (220) planes for Cu (JCPDS:65-9743), which are consistent with the previous literature [28,29]. After FeCl3 etching, the observed diffraction peaks are located at 2θ = 29.5°, 36.4°, 42.2°, 61.3°, 73.5°, 77.3°, and 92.4°, indexed by the cubic fcc structure of Cu2+1O, which are consistent with the Cu2+1O prepared by other techniques [30,31].…”

S-doped AuPd aerogels as high efficiency catalysts for the oxygen reduction reaction by balancing the ratio between bridging S22− and apical S2− ligands

“…4 and S19, ESI †) in 0.5 M H 2 SO 4 solution. [66][67][68] Both AuPd-S B67A33 aerogels (103.5 m 2 g Pd À1 ) and AuPd-S B50A50 aerogels (101.6 m 2 g Pd À1 ) have a larger ECSA, which is higher than that of commercial Pt/C catalysts (60.4 m 2 g Pt À1 ). In addition, the larger ECSA of AuPd-S B67A33 aerogels and AuPd-S B50A50 aerogels should be attributed to the unique structural characteristics of the aerogels.…”

New generation copper-based interconnection from nanoporous CuSn alloy film sintered at low temperatures

“…29,30 A similar approach has previously been reported for the creation of np-AuCu and np-PdCu films, performed via electrochemical etching of pre-deposited Cu-rich Au-Cu and Pd-Cu alloys, respectively. 31,32 In theory, the formation of a np-CuSn structure can be realized by selectively removing Sn in an electrolyte that promotes the retention of a certain level of Sn. To this end, Sn-rich (ranging from 65 to 89 at%) CuSn alloys are prepared as precursor substrates through potentiostatic overpotential deposition (OPD) at À1.8 V (vs. MSE).…”