Controlling the size of single-digit pores, such as those
in graphene,
with an Å resolution has been challenging due to the limited
understanding of pore evolution at the atomic scale. The controlled
oxidation of graphene has led to Å-scale pores; however, obtaining
a fine control over pore evolution from the pore precursor (i.e.,
the oxygen cluster) is very attractive. Herein, we introduce a novel
“control knob” for gasifying clusters to form pores.
We show that the cluster evolves into a core/shell structure composed
of an epoxy group surrounding an ether core in a bid to reduce the
lattice strain at the cluster core. We then selectively gasified the
strained core by exposing it to 3.2 eV of light at room temperature.
This allowed for pore formation with improved control compared to
thermal gasification. This is because, for the latter, cluster–cluster
coalescence via thermally promoted epoxy diffusion cannot be ruled
out. Using the oxidation temperature as a control knob, we were able
to systematically increase the pore density while maintaining a narrow
size distribution. This allowed us to increase H2 permeance
as well as H2 selectivity. We further show that these pores
could differentiate CH4 from N2, which is considered
to be a challenging separation. Dedicated molecular dynamics simulations
and potential of mean force calculations revealed that the free energy
barrier for CH4 translocation through the pores was lower
than that for N2. Overall, this study will inspire research
on the controlled manipulation of clusters for improved precision
in incorporating Å-scale pores in graphene.