Nanorod array-induced growth of high-quality Sb2Se3 absorber layers for efficient planar solar cells

Liu, Yongjun; Liu, Xinsheng; Zhuang, Yujun; Li, Erhao; Zhang, Shiqi; Liu, Jingling; Cheng, Ke; Du, Zuliang

doi:10.1016/j.jallcom.2023.169729

Cited by 5 publications

(2 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In [54], an Sb 2 Se 3 nanorod-array was prepared on the Mo substrate at a low temperature by RTE. The authors showed the importance of the SL growth temperature; the SL was performed at 360 • C while 480 • C was the Sb 2 Se 3 growth temperature, resulting in a preferred orientation in the (211) direction and a minimum TC value for the (230) diffraction peak.…”

Section: One-dimensional-ribbon Alignmentmentioning

confidence: 99%

Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques

Jakomin,

Rampino,

Spaggiari

et al. 2023

Solar

View full text Add to dashboard Cite

Sb2Se3, as an earth-abundant and low-toxic material, has emerged as one of the most interesting absorbers for clean renewable power generation technologies. Due to its optical properties, especially bandgap and absorption coefficient, the number of papers on Sb2Se3-based solar cells has been constantly increasing in the last ten years, and its power conversion efficiency has raised from 1% in 2014 to 10.57% in 2022. In this review, different Sb2Se3 solar cells’ fabrication technologies based on physical vapor deposition are described and correlated to the texture coefficient (ribbon orientation). Moreover, recent research works of the most promising solar cell configurations with different electron-transporting layers and hole-transporting layers are analyzed with a special emphasis on photovoltaic performances. Furthermore, different Sb2Se3 doping techniques are discussed. All these aspects are considered as new strategies to overcome the Sb2Se3 solar cell’s actual limitations.

show abstract

Section: One-dimensional-ribbon Alignmentmentioning

confidence: 99%

Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques

Jakomin,

Rampino,

Spaggiari

et al. 2023

Solar

View full text Add to dashboard Cite

show abstract

“…Perfect lattice matching and lattice vectors of the contact material are the keys to achieving epitaxy between heterojunctions. [33][34][35][36] Digenite (Cu 9 S 5 ) has a rhombohedral phase (R3-MH) with a = b = 3.93 Å, c = 48.14 Å. It is near near-perfect lattice match between Cu 9 S 5 and Sb 2 Se 3 in lattice overlap for the heteroepitaxial.…”

Section: Introductionmentioning

confidence: 99%

Controlled Epitaxial Growth of (hk1)‐Sb₂Se₃ Film on Cu₉S₅ Single Crystal via Post‐Annealing Treatment for Photodetection Application

Xiao,

Liu,

Zhang

et al. 2023

Small

View full text Add to dashboard Cite

Antimony selenide (Sb2Se3) is a promising semiconductor for photodetector applications due to its unique photovoltaic properties. Achieving optimal carrier transport in (001)‐Sb2Se3 by the material of contacting substrate requires in‐depth study. In this paper, the induced growth of Sb2Se3 films from (hk0) to (hk1) planes is achieved on digenite (Cu9S5) films by post‐annealing treatment. The flake‐like and flower‐like morphologies on the surface of Sb2Se3 films are caused by different thicknesses of the Cu9S5 films, which are related to the (hk0) and (hk1) planes of Sb2Se3 surface. The epitaxial growth of Sb2Se3 films on (105)‐Cu9S5 surfaces exhibits thickness dependence. The results inform research into the controlled induced growth of low‐dimensional materials. The device of Sb2Se3/Cu9S5/Si has good broadband response (visible to near‐infrared), self‐powered characteristics, and stability. As the crystalline quality of the Sb2Se3 film increases along the (hk1) plane, the carrier transport is enhanced correspondingly. Under the 980 nm light irradiation, the device has an excellent switching ratio of 2 × 104 at 0 bias, with responsivity, detectivity, and response time up to 17 µA W−1, 1.48 × 107 Jones, and 355/490 µs, respectively. This suggests that Sb2Se3 is suitable for self‐powered photodetectors and related optical and optoelectronic devices.

show abstract

Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications

Kamble,

Shin,

Park

et al. 2023

Solar RRL

View full text Add to dashboard Cite

Germanium selenide (GeSe), a new 2D semiconductor material, is an attractive material due to its excellent optoelectronic properties, which hold tremendous promise in a wide range of applications, including thin‐film solar cells (TFSCs) and photoelectrochemical (PEC) water splitting. Several attempts have been made to date in theoretical studies, high‐quality GeSe material synthesis, evaluating absorber properties, and developing efficient TFSCs and PEC devices. Using existing device topologies for chalcogenide materials, TFSCs with 5.2% efficiency and a PEC device with 3.17% solar‐to‐hydrogen efficiency have been recently developed. To enable its potential in high performances of TFSCs and PEC devices for future large‐scale applications, further improvement in materials quality, device design, and development is required. In this regard, this review provides a comprehensive overview of current advances made in GeSe material development and applications in TFSCs and PEC devices. First, the fundamental properties of GeSe material, theoretical studies, as well as in‐depth synthesis methods, are outlined. Then, key developments in GeSe‐based TFSCs and PEC devices are discussed with an emphasis on device designs. Finally, the most prominent impediments to a fundamental understanding of materials are highlighted, and perspectives on future research directions for improving material quality and device efficiency are provided.

show abstract

Nanorod array-induced growth of high-quality Sb2Se3 absorber layers for efficient planar solar cells

Cited by 5 publications

References 34 publications

Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques

Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques

Controlled Epitaxial Growth of (hk1)‐Sb₂Se₃ Film on Cu₉S₅ Single Crystal via Post‐Annealing Treatment for Photodetection Application

Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications

Contact Info

Product

Resources

About

Nanorod array-induced growth of high-quality Sb2Se3 absorber layers for efficient planar solar cells

Cited by 5 publications

References 34 publications

Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques

Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques

Controlled Epitaxial Growth of (hk1)‐Sb2Se3 Film on Cu9S5 Single Crystal via Post‐Annealing Treatment for Photodetection Application

Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications

Contact Info

Product

Resources

About

Controlled Epitaxial Growth of (hk1)‐Sb₂Se₃ Film on Cu₉S₅ Single Crystal via Post‐Annealing Treatment for Photodetection Application