Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

McGilly, L. J.; Sandu, Cosmin S.; Feigl, Ludwig; Damjanović, Dragan; Setter, N.

doi:10.1002/adfm.201605196

Cited by 24 publications

(23 citation statements)

References 36 publications

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“…The first one relies on the study of individual domain wall movement on long-time scales. It describes the nucleation and growth of domains and their interaction with defects, interfaces and existing domain walls [18][19][20] . The second one aims to understand collective movements during short-time scales 21,22 .…”

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confidence: 99%

Avalanche criticality during ferroelectric/ferroelastic switching

2021

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Field induced domain wall displacements define ferroelectric/ferroelastic hysteresis loops, which are at the core of piezoelectric, magnetoelectric and memristive devices. These collective displacements are scale invariant jumps with avalanche characteristics. Here, we analyse the spatial distribution of avalanches in ferroelectrics with different domain and transformation patterns: Pb(Mg1/3Nb2/3)O3–PbTiO3 contains complex domains with needles and junction patterns, while BaTiO3 has parallel straight domains. Nevertheless, their avalanche characteristics are indistinguishable. The energies, areas and perimeters of the switched regions are power law distributed with exponents close to predicted mean field values. At the coercive field, the area exponent decreases, while the fractal dimension increases. This fine structure of the switching process has not been detected before and suggests that switching occurs via criticality at the coercive field with fundamentally different switching geometries at and near this critical point. We conjecture that the domain switching process in ferroelectrics is universal at the coercive field.

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confidence: 99%

Avalanche criticality during ferroelectric/ferroelastic switching

2021

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“…This paucity of knowledge regarding the role of intrinsic point defects is primarily related to difficulties in on-demand and controlled production of such defects, which are typically formed during the synthesis process with their concentration and type being dictated by the laws of thermodynamics [12]. Recent studies on complex-oxide thin films have, however, shown that energetic ion beams are effective for ex post facto production of intrinsic point defects with control over their type, concentration, and location [13][14][15][16][17][18][19][20]. This controlled defect production provides opportunities for the systematic study of defectproperty relations in relaxors.…”

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confidence: 99%

“…S1(a) [21]). The total initial concentration of induced defects is calculated to vary from ∼10 18 to ∼10 20 cm −3 , for the ion-dose range used. It is important to note that the helium ions are implanted at a depth of ∼14.5 μm within the NdScO 3 substrate (Supplemental Material, Fig.…”

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confidence: 99%

Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

et al. 2019

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The effect of intrinsic point defects on relaxor properties of 0.68 PbMg 1=3 Nb 2=3 O 3-0.32 PbTiO 3 thin films is studied across nearly 2 orders of magnitude of defect concentration via ex post facto ion bombardment. A weakening of the relaxor character is observed with increasing concentration of bombardment-induced point defects, which is hypothesized to be related to strong interactions between defect dipoles and the polarization. Although more defects and structural disorder are introduced in the system as a result of ion bombardment, the special type of defects that are likely to form in these polar materials (i.e., defect dipoles) can stabilize the direction of polarization against thermal fluctuations, and in turn, weaken relaxor behavior.

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“…The dynamical behaviour of domain walls is subject to intense research because it is at the core of ferroelectric switching [197][198][199][200] . One approach relies on the study of individual domain wall movement on long-time scales.…”

Section: Box 2 | Domain Wall Dynamics: Avalanches In Ferroelectricsmentioning

confidence: 99%

Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials

et al. 2020

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Ferroelectric and ferroelastic domain walls are two-dimensional (2D) topological defects with thicknesses approaching the unit cell level. When this spatial confinement is combined with observations of emergent functional properties, such as polarity in non-polar systems or electrical conductivity in otherwise insulating materials, it becomes clear that domain walls represent a new and exciting state of matter. In this review, we discuss the exotic polarisation profiles that can arise at domain walls with multiple order parameters and the different mechanisms that lead to domain wall polarity in non-polar ferroelastic materials. The emergence of energetically degenerate variants of the domain walls themselves suggests the existence of interesting quasi-1D topological defects within such walls. We also provide an overview of the general notions which have been postulated as fundamental mechanisms responsible for domain wall conduction in ferroelectrics. We then discuss the prospect of combining domain walls with transition regions observed at phase boundaries, homo-and heterointerfaces, and other quasi-2D objects, enabling emergent properties beyond those available in today's topological systems. Key points• In ferroelectrics, the emergence of a second polarisation component leads to analogues of Bloch and Néel walls. The stabilization of these walls opens the possibility for quasi-1D topological defects separating wall regions of opposite polarities.• Polar domain walls in ferroelastics rely on two mechanisms: a polarity imposed by the natural symmetry of strain-compatible domain walls, which can often be described by flexoelectric gradient coupling, and the emergence of a potentially switchable polarity when their natural symmetry is broken.• Several mechanisms are responsible for domain wall conduction in ferroelectrics: extrinsic intra-bandgap defect states, intrinsic suppression of the conduction band and intrinsic shift of the band structure induced by local electric fields.• Transition regions occurring at phase boundaries, homo-and heterointerfaces, and other quasi-2D objects probably exist at a smaller length scale, in the vicinity of domain walls, and could lead to exceptional properties and coupling phenomena.

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Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

Cited by 24 publications

References 36 publications

Avalanche criticality during ferroelectric/ferroelastic switching

Avalanche criticality during ferroelectric/ferroelastic switching

Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials

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