Nanoscale effects and polaronic relaxation in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si4.gif" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mstyle mathvariant="normal"><mml:mi>CaCu</mml:mi></mml:mstyle></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mstyle mathvariant="normal"><mml:mi>Ti</mml:mi></mml:mstyle></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mstyle mathvariant="normal"><mml:mi>O

Ribeiro, Willian Campos; Joanni, Ednan; Savú, Raluca; Bueno, Paulo Roberto

doi:10.1016/j.ssc.2010.10.034

Cited by 62 publications

(25 citation statements)

References 15 publications

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“…They proposed the reduction in stacking faults in CCTO grains and low content of CCTO phase to explain the disappearance of the dielectric loss peak. Ribeiro et al 21 characterized the dielectric relaxation process related to this peak and they associated to polaronic defects based on NBLC model.…”

Section: -2mentioning

confidence: 99%

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Ribeiro¹,

Araujo²,

Bueno³

2011

Applied Physics Letters

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In this work it was demonstrated that the addition of Sn on CaCu3Ti4O12 material improved non-Ohmic behavior by suppressing dielectric properties. It was noted that the improvement of the varistor characteristics, monitored by the increase in nonlinear coefficient, occurs with the disappearance of the grain dielectric relaxation process with concomitant decreasing of both dielectric constant and dielectric loss values. By forming a solid solution, Sn4+ was incorporated into CaCu3Ti4O12 matrix deforming the crystal lattice and restricting the formation of polaronic stacking faults. Thus, the dielectric relaxation due to polaronic defects is believed to be the origin of the huge dielectric properties disappearance. This framework is in agreement with the nanosized barrier layer capacitor model.

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Section: -2mentioning

confidence: 99%

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Ribeiro¹,

Araujo²,

Bueno³

2011

Applied Physics Letters

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“…Polaron relaxation in metal oxide semiconductors has been studied in the literature by investigating temperature and electric field dependent features in the loss dielectric spectra [21,24,25].…”

Section: Introductionmentioning

confidence: 99%

Trap-Induced Dispersive Transport and Dielectric Loss in PbS Nanoparticle Films

Chanaewa

Poulsen²,

Gräfe

et al. 2016

Zeitschrift Für Physikalische Chemie

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Abstract:In this work, we investigate the electrical and dielectric response of lead sulfide (PbS) nanoparticle (NP) films with impedance spectroscopy. In particular, the influence of the ligand passivation on the surface trap state density of PbS NPs is demonstrated by comparing two different types of ligands: ethane-1,2-dithiol (EDT) and 3-sulfanylpropanoic acid (MPA). We observe that the MPA treatment passivates the PbS surface more efficiently than EDT. By analyzing the dielectric loss spectra, we are able to visualize shallow trap states in the bulk of PbS-EDT films and correlate this with the dispersive response observed in the impedance spectra. Evidence of deep trap states is revealed for both PbS-EDT and PbS-MPA diodes. Under illumination, the PbS-MPA and PbS-EDT films demonstrate almost identical trap profiles, showing solely the deep trap state densities. We conclude that the deep traps are related to the stoichiometry of the PbS NPs.

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“…Many investigations have been performed to describe the exact giant dielectric response in CCTO ceramics. These were accompanied by the development of many models . The internal barrier layer capacitor (IBLC) model of Schottky barriers at GBs is one of the most important models describing the giant dielectric response in CCTO polycrystalline ceramics.…”

Section: Introductionmentioning

confidence: 99%

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu₃Ti₄O₁₂ Ceramics Prepared by a Glycine‐Nitrate Process

et al. 2014

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Pure CaCu3Ti4O12 was successfully prepared by a glycine‐nitrate process using a relatively low calcination temperature and short reaction time of 760°C for 4 h. Fine‐grained CaCu3Ti4O12 ceramics with dense microstructure and small grain size were obtained after sintering for 1 h. The nonlinear coefficient of a fine‐grained CaCu3Ti4O12 ceramic calculated in the range 1–10 mA/cm2 was found to be very high of ~16.39 with high breakdown electric field strength of 1.46 × 104 V/cm. This fine‐grained CaCu3Ti4O12 ceramic also exhibited a very low loss tangent of 0.017 at 20°C with temperature stability over the range −55°C to 85°C. The grain growth rate of the CaCu3Ti4O12 ceramics was found to be very fast after increasing the sintering time from 1.5 to 3 h, leading to formation of a coarse‐grained CaCu3Ti4O12 ceramic with grain size of about 100–200 μm. The dielectric permittivity of this coarse‐grained ceramic was found to be as high as 1.03 × 105 with a low loss tangent of 0.054.

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Nanoscale effects and polaronic relaxation in CaCu3Ti4O

Cited by 62 publications

References 15 publications

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Trap-Induced Dispersive Transport and Dielectric Loss in PbS Nanoparticle Films

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu₃Ti₄O₁₂ Ceramics Prepared by a Glycine‐Nitrate Process

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Nanoscale effects and polaronic relaxation in CaCu3Ti4O

Cited by 62 publications

References 15 publications

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Trap-Induced Dispersive Transport and Dielectric Loss in PbS Nanoparticle Films

Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu3Ti4O12 Ceramics Prepared by a Glycine‐Nitrate Process

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Improved Dielectric and Nonlinear Electrical Properties of Fine‐Grained CaCu₃Ti₄O₁₂ Ceramics Prepared by a Glycine‐Nitrate Process