Nanoscale fabrication of heterostructures in thermoelectric SnTe

Zhang, Hu; Lu, Lu; Meng, Weiwei; Cheng, Shao-Dong; Mi, Shao-Bo

doi:10.1039/d3nr04646j

Nanoscale

2024

DOI: 10.1039/d3nr04646j

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Nanoscale fabrication of heterostructures in thermoelectric SnTe

Hu Zhang,

Lu Lu,

Weiwei Meng

et al.

Abstract: Enhancing the performance of thermoelectric materials is demanded to develop strategies for introducing multidimensional microstructures into materials to induce full-scale phonon scattering while ensuring electrical transport performance. Here, we report...

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2024

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Cited by 2 publications

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Raising the Curie Temperature of Two-Dimensional Semiconducting CrSbr by van der Waals Coupling with In-Plane Ferroelectric GeS

Zhou,

Li,

Zhou

2024

J. Phys. Chem. C

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For most multiferroics, the combination of ferromagnetism and ferroelectricity holds unprecedented promise for high-density and low-power polymorphic storage. In contrast to single-phase multiferroics, which cannot achieve strong magnetoelectric coupling at room-temperature, heterostructure coupling is an effective strategy. In this work, based on first-principles calculations, the magnetoelectric coupling in the CrSBr/GeS heterostructure is investigated. As a representative of 2D ferromagnetic materials, CrSBr can be exfoliated from a layered bulk crystal, but its Curie temperature (T C ) remains well below room temperature. GeS is an experimentally preparable ferroelectric semiconductor with in-plane polarization. The interfacial coupling in the heterostructure not only facilitates charge transfer but also provides a new exchange coupling path for Cr in the ferromagnetic CrSBr, further increasing the T C of the magnetic system. In addition, both in-plane strain and back-gate electric field can regulate the electric polarization intensity of FE GeS, which further affects the charge distribution and coupling of the interface and changes the T C of the magnetic layer. With a 5% tensile strain along the a-axis direction, the T C of CrSBr increases to 246 K, while the in-plane polarization of GeS decreases to 3.71 × 10 −10 C/m. These results show that CrSBr/GeS multiferroic heterostructures provide a multiknob research platform for magnetoelectric coupling and high-density memory devices.

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Raising the Curie Temperature of Two-Dimensional Semiconducting CrSbr by van der Waals Coupling with In-Plane Ferroelectric GeS

Zhou,

Li,

Zhou

2024

J. Phys. Chem. C

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One Stone, Three Birds: Feasible Tuning of Barrier Heights Induced by Hybridized Interface in Free-Standing PEDOT@Bi2Te3 Thermoelectric Films

Feng,

Wang,

Luo

et al. 2024

Polymers

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Converting low-grade thermal energy into electrical energy is crucial for the development of modern smart wearable energy technologies. The free-standing films of PEDOT@Bi2Te3 prepared by tape-casting hold promise for flexible thermoelectric technology in self-powered sensing applications. Bi2Te3 nanosheets fabricated by the solvothermal method are tightly connected with flat-arranged PEODT molecules, forming an S-Bi bonded interface in the composite materials, and the bandgap is reduced to 1.63 eV. Compared with the PEDOT film, the mobility and carrier concentration of the composite are significantly increased at room temperature, and the conductivity reaches 684 S/cm. Meanwhile, the carrier concentration decreased sharply at 360 K indicating the creation of defect energy levels during the interfacial reaction of the composites, which increased the Seebeck coefficient. The power factor was improved by 68.9% compared to PEDOT. In addition, the introduction of Bi2Te3 nanosheets generated defects and multidimensional interfaces in the composite film, which resulted in weak phonon scattering in the conducting polymer with interfacial scattering. The thermal conductivity of the film is decreased and the ZT value reaches 0.1. The composite film undergoes 1500 bending cycles with a 14% decrease in conductivity and has good flexibility. This self-supporting flexible thermoelectric composite film has provided a research basis for low-grade thermal energy applications.

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Nanoscale fabrication of heterostructures in thermoelectric SnTe

Abstract: Enhancing the performance of thermoelectric materials is demanded to develop strategies for introducing multidimensional microstructures into materials to induce full-scale phonon scattering while ensuring electrical transport performance. Here, we report...

Cited by 2 publications

References 65 publications

Raising the Curie Temperature of Two-Dimensional Semiconducting CrSbr by van der Waals Coupling with In-Plane Ferroelectric GeS

Raising the Curie Temperature of Two-Dimensional Semiconducting CrSbr by van der Waals Coupling with In-Plane Ferroelectric GeS

One Stone, Three Birds: Feasible Tuning of Barrier Heights Induced by Hybridized Interface in Free-Standing PEDOT@Bi2Te3 Thermoelectric Films

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