A porous CuN3 film has been facilely synthesized by
a sustainable electroassisted azidation methodology using the template
of porous Cu as a precursor. Such porous CuN3 films show
excellent performances of both superior energy release and tremendous
brisance, which can be tuned by changes of the current density and
azidation time. Energy release reaches a maximum of 1200 J·g–1 at a current density of 3.0 mA·cm–2 with a reaction time of 450 s. Meanwhile, the conversion ratio of
Cu can reach ca. 31% with ca. 43 wt % of CuN3 in the prepared
CuN3 film. In addition, the growth mechanism of the CuN3 film is justified by not only experimental observations but
also density functional theory calculations. Compared with the common
gas–solid azidation method, this electrosynthesis strategy
can lead to great reduction in the reaction time (from >12 h to
<10
min) even without the use of dangerous HN3 gas. Moreover,
the preparation method here is fully compatible with microelectromechanical
system (MEMS) technology, which is of great significance in promising
applications for functional energetic chips.