Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

Abstract

A single gate III-V junctionless tunnel field effect transistor (SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation. This device has a thin uniformly n-type doped channel of GaSb i.e. gallium antimonide which is grown epitaxially over silicon substrate. The DC performance parameters such as I ON , I ON /I OFF , average and point subthreshold slope as well as device parameters for analog applications viz. transconductance g m , transconductance generation efficiency g m /I D , various capacitances and the unity gain frequency f T are studied using a device simulator. Along with examining its endurance to short channel effects, the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET (DG-JLTFET). The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.

Effect of GaSb Compound on Silicon Bandgap Energy

“…III-V compound semiconductors are widely used in the production of high-speed electronic devices due to the high mobility of charge carriers [4][5]. These semiconductors are the main materials for making semiconductor lasers (such as GaAs) and infrared detectors (such as GaSb) due to their proper transition to bandgap energies [6][7][8].…”

A Surface Study of Si Doped Simultaneously with Ga and Sb

“…As [6][7] evidenced, thin layers of GaSb on various substrates were obtained by using the modern method of molecular beam epitaxy (MBE), and their properties were studied using Raman spectroscopy [8]. The possibility of manufacturing high-frequency electronic devices [9][10] and the possibility of obtaining infrared sensors were shown in [11][12][13].…”