voltage and the overall electrical behavior of a device strongly depend on the nonradiative recombination rate of the charge carriers within a material, which is affected by the defects inherently present within the semiconductor. Despite all the efforts in developing higher performance thin-fi lm polycrystalline solar cells, such as CdTe, CuIn x Ga (1− x ) Se 2 (CIGS), and Cu 2 ZnSnS 4 (CZTS), the difference between the theoretically predicted and the best experimentally achieved V oc is still considerably large (up to 0.6 V). [ 2,3 ] For Si, extensive research has been dedicated to design and implement nanostructured light-trapping architectures to boost light absorption; [4][5][6][7] however, there are very few experiments showing how the V oc is affected. For organic PV blends, the limited V oc observed in most bulk heterojunction solar cells is attributed to geminate and nongeminate losses; [ 8,9 ] nevertheless, local variations in V oc have never been measured. Thus, for any micrometer-and nanoscale structured PV device, assessing variations in V oc with nanoscale resolution and spatially resolving where recombination occurs within the material can potentially change the pathway for designing higher performance devices.Imaging methods based on atomic force microscopy (AFM) techniques have been extensively used to characterize the structural and electrical properties of PV materials and full devices. [10][11][12][13][14][15][16][17][18][19][20][21] In particular, Kelvin probe force microscopy (KPFM) has been implemented to probe the electrical characteristics of a variety of PV materials and devices, ranging from organic materials [ 9,[22][23][24] and oxides [ 25 ] to III-V semiconductors for multijunction designs [26][27][28] and polycrystalline thin fi lms. [ 18,[29][30][31][32][33][34][35] The local optoelectronic properties and changes in material composition have also been mapped using near-fi eld scanning optical microscopy (NSOM) probes as local sources of excitation. [36][37][38][39][40][41][42] Very recently, photoluminescence has emerged as a promising tool to map charge recombination [43][44][45] and carriers diffusion [ 46 ] with high spatial resolution. At low temperature (70 K), photoluminescence imaging with submicrometer resolution has been implemented to map a 10 meV quasi-Fermi level splitting in CIGS solar cells, where variations in the intensity signal were attributed to changes in the material composition. [ 47 ] Nevertheless, none of these imaging techniques provide a direct measurement of V oc within the material at operating conditions. A straightforward, universal, and accurate method to measure the V oc (and hence nonradiative recombination processes) with high spatial resolution in PV materials is still missing.Here, we present a new imaging technique based on illuminated KPFM to map the V oc of optoelectronic devices with nanoscale resolution <100 nm. We map the contact potential difference (CPD) of half or fully processed solar cells in the For most photovoltaic (PV) devices, the...