Nanoscale junctionless devices using ringFET structure on bulk silicon substrate

Scarlet, S. Priscilla; Srinivasan, R.; Sasikala, P.

doi:10.1080/21681724.2017.1382003

Cited by 1 publication

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The sublayer ITO2 differ from ITO1 primarily in lower carrier concentration of 3.63 × 10 14 cm −3 . The layer thickness and doping concentration provide greater control on the device characteristics [21]. The third sublayer of the active channel that has a low carrier concentration provide higher charge trap density and increases the mobility of channel structure.…”

Section: Device Design and Experimentsmentioning

confidence: 99%

Design and analysis of novel tri‐active layer channel amorphous‐IGZO thin‐film transistor

Dargar

Srivastava

2019

Micro & Nano Letters

View full text Add to dashboard Cite

Among high-field mobility materials, amorphous indium-gallium-zinc oxide (In-Ga-ZnO) (α-IGZO) has been prominent for their use in thin-film transistors (TFTs). In this Letter, the authors present a novel structure of TFT with tri-active layer (TAL) channel consisting of α-IGZO and In-SnO (ITO) materials. Further, the simulation-based analysis of the proposed device and characteristics in comparison to the single and double active layer channel structures have been reported. This work also analyses the effect of front-back channel thickness-ratios in double-active layer channel TFTs. The proposed TAL channel TFT describes improved switching parameters such as lower threshold voltage (V TH) − 4.24 V, high field-effect mobility (µ FE) 38.4 cm 2 /V-s, moderate subthreshold swing 0.398 mV/decade, and reasonably high ONto OFF current ratio (I ON /I OFF) 0.18 × 10 12. The electrical characteristics persuade the significance of the proposed structure in next-generation flat-panel displays.

show abstract

Section: Device Design and Experimentsmentioning

confidence: 99%