Nanoscale mapping of temperature-dependent conduction in an epitaxial VO₂ film grown on an Al₂O₃ substrate

Abstract

We investigated temperature-dependent nanoscale conduction in an epitaxial VO2 film grown on an Al2O3 substrate using conductive-atomic force microscopy and deep data analysis.

Reconfigurable Resistive Switching in VO2/La0.7Sr0.3MnO3/Al2O3 (0001) Memristive Devices for Neuromorphic Computing

“…Vanadium oxide (VO 2 )-based memristive devices are one of the promising classes of materials in the field of artificial neurons. − These artificial neurons leverage the unique property of VO 2 to emulate the nonlinear dynamics of biological neurons, which is the metal–insulator transition (MIT) and quick relaxation in response to external stimuli such as electrical pulses . In the past decade, a great deal of research effort has been devoted to understanding the electrically induced MIT in VO 2 thin films on both crystalline and amorphous substrates (Al 2 O 3 , TiO 2 , Si, SiO 2 , Ge, Ti, Pt, and TiN). − The MIT in VO 2 thin films have been well achieved on many different substrates, which makes this material particularly appealing for developing CMOS-compatible artificial neurons . For instance, Yi et al demonstrated that the sputter-deposited Pt/VO 2 /Pt devices on Si 3 N 4 /Si substrates achieve several biological neuronal dynamics with a superior energy efficiency of >10 13 spikes/J …”