aqueous electrolyte solution acting as the gate dielectric in contact with the organic semiconductor (OS). [1,2] This kind of architecture enables the WGOFET to transduce bioelectrical signals and to detect molecular analytes, ions, and biomarkers. [1,3,4] In WGOFETs the charge accumulation in the OS is caused by the electrolyte ions migrating close to the OS interface and to the gate interface when a gate potential is applied. [5,6] Thus, charge accumulation in the OS film and charge transport occur close to OS/electrolyte interface. In this scenario, the structural organization and the morphological features of the OS/ electrolyte interface play a crucial role in the device performance, as expected in any class of field-effect transistors based on thin films. The growth mechanism of the active layer as the thin-film layer thickness is increased typically controls the film morphology and molecular organization of the interface that is finally exposed to water, as it is in the case of standard OFET devices with a top-gate configuration. [6-8] Among the plethora of organic semiconductors with different molecular structures and tailored electrical properties, thin films comprised by linear molecular systems, like pentacene and α-sexithiophene, are subjected to a transition from a layer-by-layer to island growth upon completion of a few molecular monolayers (5-6 nm). [9-12] This growth mechanism Water-gated organic field-effect transistors (WGOFETs) are relevant devices for use in the fields of biosensors and biosystems. However, real applications require very stringent performance in terms of electrochemical stability and charge mobility to the organic semiconductor in contact with an aqueous environment. Here, a comparative study of two small-molecule electrontransporting perylenediimide semiconductors, which differ only in the N-substituents named PDIF-CN 2 and PDI8-CN 2 is reported. The two materials present similar solid-state arrangements but, while the PDI8-CN 2 shows a more 3D growth modality and electron mobility independent of the semiconductor layer thickness (â10 â4 cm 2 V â1 s â1), the PDIF-CN 2 has an almost-2D growth modality and the mobility increases with the semiconductor film thickness, reaching a maximum value of â5 Ă 10 â3 cm 2 V â1 s â1 at 30 nm. Above this thickness, the PDIF-CN 2 switches to a more 3D growth modality, and the mobility drops by one order of magnitude. XRR analysis indicates that a PDIF-CN 2 film can be modeled as a dense layered structure in which each layer is decoupled from the others due to the presence of fluorocarbonchains. The availability of additional pathways for charge transport from buried layers and the 2D versus 3D growth can explain the mobility dependence on the film thickness.