Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

Iglesias, V.; Lanza, Mario; Bayerl, A.; Porti, M.; Nafrı́a, Montserrat; Aymerich, X.; Liu, L. F.; Kang, Jinfeng; Bersuker, G.; Zhang, K.; Shen, Zebang

doi:10.1016/j.microrel.2012.06.073

Cited by 15 publications

(9 citation statements)

References 19 publications

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“…Even if this method has the advantage that the LRS/HRS state are induced using real structures, a very selective etching method to remove the top electrode is necessary, and the chemical etchant may affect the composition of the CF and insulator surface. Wet etching and FIB are among the most common etching methods [ 57 , 58 ]. Celano et al .…”

Section: Methodologies For a Correct Observation Of Resistive Switchimentioning

confidence: 99%

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

2014

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Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or “0”) and a low resistive state (LRS or “1”), which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells) is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses.

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Section: Methodologies For a Correct Observation Of Resistive Switchimentioning

confidence: 99%

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

2014

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“…Similar to the sequences of I – V sweeps, the RS can also be studied from sequences of current maps . The advantage compared to sequences of I – V sweeps is that the current maps can test much larger areas (typically 1 µm × 1 µm to 10 µm × 10 µm), which allows performing statistical analyses of the size and currents driven by the CFs .…”

Section: Device Characterizationmentioning

confidence: 99%

“…Therefore, the top electrode needs to be removed before the CAFM scan. The main two options reported are: i) removing the top electrode via standard dry or wet etching. In fact, this was the first type of RS experiment conducted using CAFM, and allowed for the first time detecting the changes on the size and resistivity of single CFs.…”

Section: Device Characterizationmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

525

434

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Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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“…In its origin CAFM, was mainly used to characterize the electrical properties of thin (<50 nm) dielectric materials (i.e., SiO 2 , HfO 2 , Al 2 O 3 ) at nanoscale. More specifically, the CAFM can be used to study tunneling current, polycrystallization, charge trapping and de‐trapping, random telegraph noise, stress induced leakage current (SILC), dielectric breakdown, and resistive switching . Recently, its use has also expanded to other low‐dimensional materials, such as nanowires (NWs), carbon nanotubes (CNT), nanodots, and 2D materials .…”

Section: Introductionmentioning

confidence: 99%

Emerging Scanning Probe–Based Setups for Advanced Nanoelectronic Research

Hui

Wen

Chen

et al. 2019

Adv Funct Materials

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Figure 3. a) Schematic of the CAFM integrated into the SEM. b) SEM image of a CAFM tip landed on the NW arrays. c) Top-view SEM image of the ZnO NW arrays. d) AFM topographic map of the as-fabricated ZnO NW arrays collected in tapping mode using a Si tip. Reproduced with permission. [109] Despite the main drawback of this method is the instability of the filament due to the extreme thinness of the lamella, one work proved a stable cyclic operation (more than 60 switching cycles) in 30 nm CuTe-based conductive bridging random access memory (CBRAM). [119] Multiprobe Advanced Characterization MethodsDespite the high lateral resolution of SPM represents a very strong advantage compared to traditional electrical characterization methods (i.e., probe station), the use of only one probe Adv. Funct. Mater. 2020, 30, 1902776Figure 4. a) TEM image of an overview of a sample; each finger contains a stack of Ni/HfO 2 /SiO x /n + Si. Current-time plots indicate the typical b) SET and c) RESET processes. d) TEM image (top) and corresponding EDS nickel map (bottom) of the device in a SET state. Reproduced with permission. [114] Copyright 2015, Wiley VCH. e) I-V graph of in situ electroforming and RESET of Pt/ZnO/Pt where the top electrode (TE) was negatively biased while the bottom electrode (BE) was grounded, and corresponding f-h) electroforming and i,j) RESET images extracted. Reproduced with permission. [118]

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Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

Cited by 15 publications

References 19 publications

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

Recommended Methods to Study Resistive Switching Devices

Emerging Scanning Probe–Based Setups for Advanced Nanoelectronic Research

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