Abstract:Self-assembled, epitaxially grown InAs/GaAs quantum dots (QDs) are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of QDs, presenting a challenge in creating devices that exploit the strong interaction of single QDs with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single Q… Show more
“…A double light-emitting diode (LED) imaging technique is used to locate single QDs with nanometer-scale accuracy [5]. The emitters are then spectrally characterized by means of micro-photoluminescence laser spectroscopy at cryogenic temperatures.…”
Metallic nano-rings deposited on the sample surface, centered around single InAs/GaAs quantum dots, enhance the brightness of the emission up to ×20, further enhanced by ×10 by epoxy solid-immersion lenses, in a scalable broadband device.
“…A double light-emitting diode (LED) imaging technique is used to locate single QDs with nanometer-scale accuracy [5]. The emitters are then spectrally characterized by means of micro-photoluminescence laser spectroscopy at cryogenic temperatures.…”
Metallic nano-rings deposited on the sample surface, centered around single InAs/GaAs quantum dots, enhance the brightness of the emission up to ×20, further enhanced by ×10 by epoxy solid-immersion lenses, in a scalable broadband device.
“…We use photoluminescence imaging as a high-throughput technique to locate single QDs with nanometer scale accuracy [5][6][7] , by imaging their emission, along with reflected light off reference alignment marks, onto a sensitive CCD camera. A schematic of the sample and an example of a photoluminescence image of the QD emission and alignment marks are shown in Figs.…”
We present a combined optical and AFM characterization technique that determines whether single InAs/GaAs quantum dots appear in proximity to (up to micron-sized) topographic surface features that can be detrimental to quantum photonic device performance.OCIS codes: (300.6280) Spectroscopy, fluorescence and luminescence; (350.4238) Nanophotonics and photonic crystals; (180.0180) Microscopy; (250.5590) Quantum-well, -wire and -dot devices.
“…We apply a nanoscale imaging technique [5] to directly image the confined optical modes, by illuminating the sample with a wide-area 455 nm LED, and imaging the emitted light with an electron multiplying charge coupled device (EMCCD) (Fig. 1b).…”
Abstract:We demonstrate Anderson localization of visible light in silicon nitride photonic crystal waveguides. We measure photoluminescence resonances due to disorder-induced light localization showing quality factors of ≈10 000 that exceed engineered 2D photonic crystal cavities.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.